High Speed and High Contrast Spatial Light Modulator Using Uniaxial Strain
High Speed and High Contrast Spatial Light Modulator Using Uniaxial Strain
批准号:
9216669
负责人:
Yicheng Lu
金额:
$7.5万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1992
资助国家:
美国
项目状态:
已结题
起止时间:
1992-09-01 至 1995-02-28
中文摘要
提出了一种高速、高对比度的半导体空间光调制器(SLM)的研究和后续设计。SLM在内置单轴应力下使用MQW中的偏振旋转。通常应变的mqw是条纹形式的图案,以诱导吸收的各向异性。然后将MQW结构夹在两个线性偏振器之间,类似于液晶slm。“开”和“关”状态由外加电压控制。由偏光片质量决定的对比度可高达1000:1;由异质结构中的电吸收决定的调制速度可以达到皮秒级。该提案代表了罗格斯大学电气与计算机工程系与蒙茅斯堡电子技术与设备实验室(ETDL)之间为期两年的合作。罗格斯大学的工作将侧重于加工开发、结构表征和理论建模。此外,一名来自罗格斯大学的研究生将花费大部分时间在ETDL,为这个项目进行光学研究。美国国家科学基金会的支持将大大加强我们在这一领域的共同努力。
英文摘要
An investigation for, and subsequent design of a high speed, high contrast, semiconductor spatial light modulator (SLM) is proposed. The SLM uses polarization rotation in a MQW under built-in uniaxial stress. The ordinarily strained MQWs are pattern with stripe forms to induce an anisotropy in the absorption. The MQW structures then are sandwiched between two linear polarizers similar to liquid crystal SLMs. the "on" and "off" states are controlled with an applied voltage. The contrast ratio, which is determined by the quality of the polarizers, can reach as high as 1000: 1; which the modulation speed, which is determined by electro-absorption in the heterostructures, can reach the picosecond range. The proposal represents a two-year collaboration between the Department of Electrical and Computer Engineering at Rutgers University and the Electronics Technology and Devices Laboratory (ETDL) at Fort Monmouth. The work at Rutgers will focus on processing development, structural characterization, and theoretical modeling. In addition, a graduate student from Rutgers will spend and majority of her time at ETDL, performing the optical studies for this project. The National Science Foundation's support will greatly enhance our joint efforts in this area.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
Collaborative Research: Stepwise Functionalization and Surface Modification for ZnO Nanostructure-based Biosensors
-
批准号:1264508
-
项目类别:Continuing Grant
-
资助金额:$22.0万
-
财政年份:2013
-
负责人:Yicheng Lu
-
依托单位:
ZnO/GaN Heterostructure-based Novel Acousto-electronic Devices
-
批准号:1002178
-
项目类别:Standard Grant
-
资助金额:$30.68万
-
财政年份:2010
-
负责人:Yicheng Lu
-
依托单位:
Collaborative Research: Actively Managing Data Movement with Models - Taming High Performance Data Communications in Exascale Machines
-
批准号:0833039
-
项目类别:Standard Grant
-
资助金额:$0.0万
-
财政年份:2008
-
负责人:Yicheng Lu
-
依托单位:
GOALI/Spin Electronics: Development of ZnO Based Room Temperature Spintronics
-
批准号:0224166
-
项目类别:Continuing Grant
-
资助金额:$32.5万
-
财政年份:2002
-
负责人:Yicheng Lu
-
依托单位:
NER: Feasibility Studies on ZnO Nanostructures And Their Device Applications
-
批准号:0103096
-
项目类别:Standard Grant
-
资助金额:$10.0万
-
财政年份:2001
-
负责人:Yicheng Lu
-
依托单位:
Monolithically Integrated Tunable ZnO SAW Chip
-
批准号:0088549
-
项目类别:Standard Grant
-
资助金额:$50.99万
-
财政年份:2000
-
负责人:Yicheng Lu
-
依托单位:
Polarization and Phase Sensitive Optical Modulator Array
-
批准号:9414557
-
项目类别:Standard Grant
-
资助金额:$8.96万
-
财政年份:1994
-
负责人:Yicheng Lu
-
依托单位:
High Desity and Compact Waveguide Using Ge on GaAs
-
批准号:9312726
-
项目类别:Standard Grant
-
资助金额:$5.0万
-
财政年份:1993
-
负责人:Yicheng Lu
-
依托单位:
Avalanche Electron Emitter Array for Vacuum Microelectronics
-
批准号:9111089
-
项目类别:Standard Grant
-
资助金额:$7.92万
-
财政年份:1991
-
负责人:Yicheng Lu
-
依托单位:
海外基金