High Desity and Compact Waveguide Using Ge on GaAs

9312726 Lu我们建议在中红外的GaAs波导上产生Ge。 这种新型波导提供了与当前电子集成电路类似的高密度和紧凑的光学布线。 高密度被认为是每平方厘米表面超过10，000个组件。 如果光学布线或波导的尺寸比波长小得多，则它们被认为是紧凑的。 我们在这里调查的折射率比为4.0至1与锗波导限制的空气包层。 这种高折射率比允许对光进行前所未有的控制和限制。 这种方法的问题主要是设计问题，因为严格的限制要求波导元件的开发完全从波的角度而不是从通常的傍轴射线光学的角度来重新考虑。使用高折射率比来产生高限制适用于从微波到可见光的所有波长。 我们将使用微波模型对组件进行测试，并使用10微米波长在中红外线中创建有用的设备。 中红外器件的设计结果可应用于可见光和近红外集成光学，如GaAs AlAs包层波导。 ***

9312726 Lu We propose to create Ge on GaAs waveguides in the mid infared. This novel waveguide offers high density and compact optical wiring in analogy with current electronic integrated circuits. High density is considered to be well over 10,000 components per square centimeter of surface. Optical wiring, or waveguides, are considered to be compact if their dimensions are much smaller than the wavelength. We are investigating here refractive index ratios of 4.0 to 1 with Ge waveguides confined by an air cladding. This high index ratio allows unprecedented control and confinement of the light. The problem in this approach is primarily one of design as tight confinement requires the waveguide component development to be rethought entirely in terms of waves rather than the usual paraxial ray optics. The use of high index ratios to create high confinement is applicable to all wavelenghts from microwave to the visible. We will perform our tests of components with microwave models, and create useful devices in the mid infrared using 10 micrometer wavelengths. The design results of the mid infrared components ae applicable to visible and near infrared integrated optics using, for instance, GaAs waveguides with AlAs cladding. ***