High Desity and Compact Waveguide Using Ge on GaAs

9312726 Lu我们建议在中红外的GaAs光波导上制作Ge。这种新型的波导提供了高密度和紧凑的光学布线，类似于目前的电子集成电路。高密度被认为远远超过每平方厘米表面10,000个成分。如果光缆的尺寸比波长小得多，就被认为是紧凑的。我们在这里研究了用空气包层限制的Ge波导的折射率比为4.0：1。这种高折射率比允许对光进行前所未有的控制和限制。这种方法的问题主要是设计问题，因为严格的限制要求完全根据波而不是通常的近轴射线光学来重新考虑波导组件的发展。使用高折射率比来产生高限制适用于从微波到可见光的所有波长。我们将使用微波模型对组件进行测试，并使用10微米波长制造有用的中红外设备。中红外元件的设计结果适用于可见光和近红外集成光学器件，例如具有AlAs包层的GaAs光波导。***

9312726 Lu We propose to create Ge on GaAs waveguides in the mid infared. This novel waveguide offers high density and compact optical wiring in analogy with current electronic integrated circuits. High density is considered to be well over 10,000 components per square centimeter of surface. Optical wiring, or waveguides, are considered to be compact if their dimensions are much smaller than the wavelength. We are investigating here refractive index ratios of 4.0 to 1 with Ge waveguides confined by an air cladding. This high index ratio allows unprecedented control and confinement of the light. The problem in this approach is primarily one of design as tight confinement requires the waveguide component development to be rethought entirely in terms of waves rather than the usual paraxial ray optics. The use of high index ratios to create high confinement is applicable to all wavelenghts from microwave to the visible. We will perform our tests of components with microwave models, and create useful devices in the mid infrared using 10 micrometer wavelengths. The design results of the mid infrared components ae applicable to visible and near infrared integrated optics using, for instance, GaAs waveguides with AlAs cladding. ***