ZnO/GaN Heterostructure-based Novel Acousto-electronic Devices

基于ZnO/GaN异质结构的新型声电子器件

• 批准号: 1002178
• 负责人: Yicheng Lu
• 金额: $ 30.68万
• 依托单位: Rutgers University New Brunswick
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2010
• 资助国家: 美国
• 起止时间: 2010-04-15 至 2014-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1002178&HistoricalAwards=false
• 关键词: ZnO; GaN; Heterostructure; based; Novel

The objective of this research is to study the acousto-electrical interaction in ZnO/GaN heterostructures and develop the tunable devices which comprise of a piezoelectric ZnO layer and a polar semiconductor ZnO/GaN heterostructure. The approaches include: (i) grow the polar ZnO/GaN heterostructure on c-plane sapphire using MOCVD and control its polarity through interface engineering during the heteroepitaxy; and (ii) integrate a piezoelectric ZnO film with the semiconductor ZnO/GaN heterostructure to form novel ZnO/GaN acousto-electronic devices, study and simulate its characteristics, including dispersion and multi-mode surface acoustic wave properties, conduction band offset and sheet electron concentration by considering both spontaneous and piezoelectric polarizations at the ZnO/GaN interface. Intellectual merit: The novel ZnO/GaN acousto-electronic device possesses advantages including high acoustic velocity and large electro-mechanical coupling coefficient over a broad frequency range, high operation frequency using higher order wave modes, large tunability at low biasing voltage, the ability to perform versatile functions, and low manufacturing cost. Broader impact: Integration of multifunctional ZnO with semiconductor GaN will promote a new level of material integration and devices technologies; therefore, open up new research opportunities and applications. The integration of research and education is an important focus of this project. The students will gain interdisciplinary knowledge base in material growth, interface physics, comprehensive characterizations, device design and simulation, and fabrication process. The research will be facilitated by strong collaboration with industrial partners. The educational outreach efforts are directed at NJ high school students, through the Governor's School, Rutgers Science Bus program, and special summer program.

本研究的目的是研究ZnO/GaN异质结构中的声电相互作用，并开发由压电ZnO层和极性半导体ZnO/GaN异质结构组成的可调谐器件。这些方法包括：（i）使用MOCVD在c面蓝宝石上生长极性ZnO/GaN异质结构，并在异质外延期间通过界面工程控制其极性;以及（ii）将压电ZnO薄膜与半导体ZnO/GaN异质结构集成以形成新型ZnO/GaN声电子器件，研究并模拟其特性，包括色散和多模表面声波特性，通过考虑ZnO/GaN界面处的自发极化和压电极化，导带偏移和片电子浓度。智力优点：这种新型的ZnO/GaN声电子器件具有以下优点：在宽的频率范围内具有高的声速和大的机电耦合系数，使用高阶波模式的高工作频率，在低偏置电压下具有大的可调谐性，能够执行多功能，以及低制造成本。更广泛的影响：多功能ZnO与半导体GaN的集成将促进材料集成和器件技术的新水平，因此，开辟了新的研究机会和应用。研究与教育的融合是该项目的一个重要重点。学生将获得材料生长，界面物理，综合表征，器件设计和模拟以及制造工艺方面的跨学科知识基础。该研究将通过与工业合作伙伴的密切合作来促进。教育推广工作是针对新泽西州的高中学生，通过州长的学校，罗格斯科学巴士计划，和特殊的夏季计划。