NER: Feasibility Studies on ZnO Nanostructures And Their Device Applications

提案编号： 0103096主要研究者：陆毅成机构名称：罗格斯大学新不伦瑞克分校标题：NER：ZnO纳米结构及其器件应用的可行性研究本提案针对氧化锌（ZnO）纳米结构及其器件应用的可行性研究进行了探索性研究。ZnO是一种多功能材料，具有独特的电学、光学、声学和机械性能。半导体ZnO具有宽而直的禁带宽度（~3.3eV）。ZnO可以在低温下生长，与其他宽带隙材料，如GaN和SiC相反。它的三元化合物，由ZnO与CdO和MgO合金化形成，允许从~2.8 eV到~4 eV的带隙调谐。掺杂ZnO三元化合物可以制成磁性或铁电性材料，使其应用范围超出了传统的半导体范围。在这项探索性研究中，我们将研究生长机制，并进行衬底工程选择性生长的ZnO纳米尖和纳米尖阵列的各种衬底上，包括R-平面蓝宝石，硅，蓝宝石上的硅（SOS），和氮化镓蓝宝石。ZnO nanotip应用的可行性研究将集中在场发射，二维光子带隙（PBG），和精细仪器，如原子力显微镜和扫描隧道光学显微镜。我们还将探索使用激活合金相分离机制在ZnO中形成CdO量子点的可行性，这可能被证明是Stranski-Krastanov机制的可行替代方案。这些量子点在紫外激光器和集成紫外光电子芯片中具有潜在的应用前景。本文的工作将把纳米结构和器件的研究扩展到宽禁带半导体纳米科学与工程领域。对ZnO及其三元纳米结构的研究和开发将产生一类集多种现象于一体、具有前所未有的多功能特性的新型器件。

PROPOSAL NO.: 0103096PRINCIPAL INVESTIGATOR: Lu, YichengINSTITUTION NAME: Rutgers University New BrunswickTITLE: NER: Feasibility Studies on ZnO Nanostructures And Their Device ApplicationsThis proposal addresses the exploratory research on zinc oxide (ZnO) based nanoscale structuresand feasibility study of their device applications. ZnO is a multifunctional material possessing uniqueelectrical, optical, acoustical, and mechanical properties. Semiconductor ZnO has a wide and directenergy bandgap (~3.3eV). ZnO can be grown at low temperatures, in contrast with the other widebandgap materials, such as GaN and SiC. Its ternary compounds, formed by alloying ZnO with CdO andMgO, permit bandgap tuning from ~2.8 eV to ~4 eV. Doped ZnO ternaries can be made magnetic orferroelectric, extending its applications beyond the traditional semiconductor confines. In this exploratoryresearch, we will study growth mechanisms and conduct substrate engineering for selective growth ofZnO nanotips and nanotip arrays on various substrates, including R-plane sapphire, Si, silicon-on-sapphire(SOS), and GaN-on-sapphire. Feasibility studies of ZnO nanotip applications will focus on field-emission,two-dimensional photonic bandgap (PBG), and fine instrumentation such as atomic forcemicroscopy and scanning tunneling optical microscopy. We will also explore the feasibility to form CdOquantum dots in ZnO using the activated alloy phase segregation mechanism, which may be proved as aviable alternative to the Stranski-Krastanov mechanism. These quantum dots have potential applicationsin UV lasers and integrated UV optoelectronic chips. The proposed work will extend the research onnanoscale structures and devices into the field of wide bandgap semiconductor nanoscale science andengineering. The research and development of nanoscale structures in ZnO and its ternaries will lead to afundamentally new class of devices, which integrate multi-phenomena and posses unprecedented multi-functionalcharacteristics.