NER: Feasibility Studies on ZnO Nanostructures And Their Device Applications

项目编号：0103096项目研究人员：陆益成项目名称：罗格斯大学新不伦瑞克分校TITLE：NER：氧化锌纳米结构及其器件应用的可行性研究本提案致力于氧化锌纳米结构的探索性研究及其器件应用的可行性研究。氧化锌是一种多功能材料，具有独特的电学、光学、声学和力学性能。半导体氧化锌具有宽的直接能隙(~3.3 eV)。与GaN和碳化硅等其他宽带隙材料相比，氧化锌可以在较低的温度下生长。它的三元化合物由氧化锌、氧化镉和氧化镁合金化而成，允许从~2.8 eV到~4 eV的带隙调节。掺杂的氧化锌三元化合物可以使其具有磁性或铁电性，从而将其应用扩展到传统的半导体限制之外。在这项探索性研究中，我们将研究生长机制，并进行衬底工程，以便在包括R面蓝宝石、硅、蓝宝石上硅(SOS)和蓝宝石上GaN在内的各种衬底上选择性地生长氧化锌纳米针尖和纳米针尖阵列。氧化锌纳米针尖应用的可行性研究将集中在场发射、二维光子带隙(PBG)以及原子力显微镜和扫描隧道光学显微镜等精细仪器方面。我们还将探索利用激活的合金相分离机制在氧化锌中形成CdO量子点的可行性，该机制可能被证明是STranski-Krastanov机制的替代方案。这些量子点在紫外光激光器和集成紫外光电子芯片中有潜在的应用。这项工作将把对纳米结构和器件的研究扩展到宽禁带半导体纳米科学和工程领域。纳米结构在氧化锌及其三元体系中的研究和发展将导致一类集多种现象于一身并具有前所未有的多功能特性的全新的器件。

PROPOSAL NO.: 0103096PRINCIPAL INVESTIGATOR: Lu, YichengINSTITUTION NAME: Rutgers University New BrunswickTITLE: NER: Feasibility Studies on ZnO Nanostructures And Their Device ApplicationsThis proposal addresses the exploratory research on zinc oxide (ZnO) based nanoscale structuresand feasibility study of their device applications. ZnO is a multifunctional material possessing uniqueelectrical, optical, acoustical, and mechanical properties. Semiconductor ZnO has a wide and directenergy bandgap (~3.3eV). ZnO can be grown at low temperatures, in contrast with the other widebandgap materials, such as GaN and SiC. Its ternary compounds, formed by alloying ZnO with CdO andMgO, permit bandgap tuning from ~2.8 eV to ~4 eV. Doped ZnO ternaries can be made magnetic orferroelectric, extending its applications beyond the traditional semiconductor confines. In this exploratoryresearch, we will study growth mechanisms and conduct substrate engineering for selective growth ofZnO nanotips and nanotip arrays on various substrates, including R-plane sapphire, Si, silicon-on-sapphire(SOS), and GaN-on-sapphire. Feasibility studies of ZnO nanotip applications will focus on field-emission,two-dimensional photonic bandgap (PBG), and fine instrumentation such as atomic forcemicroscopy and scanning tunneling optical microscopy. We will also explore the feasibility to form CdOquantum dots in ZnO using the activated alloy phase segregation mechanism, which may be proved as aviable alternative to the Stranski-Krastanov mechanism. These quantum dots have potential applicationsin UV lasers and integrated UV optoelectronic chips. The proposed work will extend the research onnanoscale structures and devices into the field of wide bandgap semiconductor nanoscale science andengineering. The research and development of nanoscale structures in ZnO and its ternaries will lead to afundamentally new class of devices, which integrate multi-phenomena and posses unprecedented multi-functionalcharacteristics.