NYI: Pulsed Discharge Processing

作者将研究动力学 脉冲辉光放电 半导体加工 有 几个重要的区别 在脉冲和连续之间 排放量尚未得到 彻底调查。 一是 调制激励源原因 电子能量分布 函数（EEDF）变为时间 依赖。 因此，在这方面， 调制激励源应 使得控制时间成为可能 平均EEDF，即使它是 难以连续控制 会发光 作者将研究权力 放电沉积机理 启动和放电 衰变机制， 确定是否适当 调制的激发源可以是 用于优化动力学， 特别的过程。 二是 负离子传输 表面可以被控制在脉冲 出院，并可能允许研究 负离子的相互作用 表面以及 微粒的运输。 最后， 脉冲放电提供了一种技术 用于正离子能量控制， 反应离子蚀刻，由于直流 可以控制自偏置电压。 作者将联合收割机等离子体状态 晶圆状态测量 测量和建模， 这项研究的过程。

The author will study the kinetics of pulsed glow discharges related to semiconductor processing. There are several important differences between pulsed and continuous discharges which have yet to be thoroughly investigated. First, the modulated excitation source causes the electron energy distribution function (EEDF) to become time dependent. As a consequence, modulated excitation sources should make it possible to control the time averaged EEDF even though it is difficult to control in continuous glows. The author will study power deposition mechanisms at discharge initiation as well as discharge decay mechanisms in order to determine whether an appropriately modulated excitation source can be used to optimize the kinetics of a particular process. Second, the transport of negative ions to surfaces can be controlled in pulsed discharges and may allow for a study of the interactions of negative ions with surfaces as well as the transport of particulates. Finally, pulsed discharges offer a technique for positive ion energy control in reactive ion etching, since the dc self bias voltage can be controlled. The author will combine plasma state measurements with wafer state measurements, and modeling in the course of this research.