Giant Magnetoresistance in Multilayers and Single Layer Phase Separating Alloy Films

这项研究的目的是加深对周期性多层和单层合金薄膜中巨磁电阻(GMR)基本性质的理解。主要工作是优化钴-银多层膜和共溅射合金膜的巨磁电阻效应。多层变量包括层厚度、层数、缓冲层材料和退火热处理。共溅射薄膜的变量包括钴/银浓度和溅射压力。第三种元素添加的影响有待确定。使用各种技术测量结构、磁阻和一般磁性。还强调了使用蒙特卡罗方法对微结构演化进行巨磁电阻行为的计算机模拟。薄膜和多层膜中磁阻的研究与磁场传感器的发展有关，例如磁记录技术中的读取头。

This goal of this research is to develop an understanding of the fundamental nature of giant magnetoresistance (GMR) displayed in periodic multilayers and single layer alloy thin films. The main effort is on optimizing GMR in cobalt-silver multilayers and co- sputtered alloy films. The multilayer variables include layer thickness, layer number, buffer layer materials, and annealing heat treatment. Co-sputtered film variables include the cobalt/silver concentrations and sputtering pressure. Effects of third elemental additions are to be determined. Structure, magnetoresistance, and general magnetic properties are measured using a variety of techniques. Also emphasized is computer simulation of the GMR behavior using a Monte Carlo approach to microstructural evolution. %%% This research on magnetoresistance in thin films and multilayers is pertinent to the development of magnetic field sensors, such as read heads in magnetic recording technology.