Tunneling Measurements for Electro-Structural Analysis of Ultra-thin Dielectrics on Silicon

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9313937 Farmer The project will explore the problems of tunnel-current-induced defect generation and identification in the ultra-thin (3.5nm) dielectric layer of metal-insulator-semiconductor (MIS) tunnel diodes. This work is of current importance to the continued scaling of MIS device structures, and shows promise for revealing new information concerning the defects. Novel tunneling methods will be used to investigate and model the dynamical, electrical and structural characteristics of these defects. Both traditional, thermally grown oxides and new, more robust dielectrics will be studied. ***