Tunneling Measurements for Electro-Structural Analysis of Ultra-thin Dielectrics on Silicon

用于硅上超薄电介质电结构分析的隧道测量

• 批准号: 9313937
• 负责人: Kenneth Farmer
• 金额: --
• 依托单位: New Jersey Institute of Technology
• 依托单位国家: 美国
• 项目类别: Continuing grant
• 财政年份: 1993
• 资助国家: 美国
• 起止时间: 1993-09-15 至 1996-02-29
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9313937&HistoricalAwards=false
• 关键词: Tunneling; Measurements; Electro; Structural; Analysis

9313937 Farmer The project will explore the problems of tunnel-current-induced defect generation and identification in the ultra-thin (3.5nm) dielectric layer of metal-insulator-semiconductor (MIS) tunnel diodes. This work is of current importance to the continued scaling of MIS device structures, and shows promise for revealing new information concerning the defects. Novel tunneling methods will be used to investigate and model the dynamical, electrical and structural characteristics of these defects. Both traditional, thermally grown oxides and new, more robust dielectrics will be studied. ***

该项目将探索金属-绝缘体-半导体（MIS）隧道二极管超薄（3.5nm）介电层中隧道电流诱导缺陷的产生和识别问题。这项工作对MIS器件结构的持续扩展具有重要意义，并有望揭示有关缺陷的新信息。新的隧道方法将用于研究和模拟这些缺陷的动力学、电学和结构特征。传统的、热生长的氧化物和新的、更坚固的介电材料都将被研究。＊＊＊