Tunneling Measurements for Electro-Structural Analysis of Ultra-thin Dielectrics on Silicon

9313937 Farmer该项目将探讨金属-绝缘体-半导体（MIS）隧道二极管的超薄（3.5nm）介电层中隧道电流引起的缺陷产生和识别问题。 这项工作是目前重要的MIS器件结构的持续缩放，并显示出希望揭示新的信息有关的缺陷。 新的隧道方法将被用来调查和模拟这些缺陷的动力学，电学和结构特性。 传统的热生长氧化物和新的更坚固的氧化物都将被研究。 ***

9313937 Farmer The project will explore the problems of tunnel-current-induced defect generation and identification in the ultra-thin (3.5nm) dielectric layer of metal-insulator-semiconductor (MIS) tunnel diodes. This work is of current importance to the continued scaling of MIS device structures, and shows promise for revealing new information concerning the defects. Novel tunneling methods will be used to investigate and model the dynamical, electrical and structural characteristics of these defects. Both traditional, thermally grown oxides and new, more robust dielectrics will be studied. ***