Acquisition of Instrumentation for Deep Reactive Ion Etching of Ultra-Thin Bonded Wafers

购置超薄键合晶圆深度反应离子蚀刻仪器

基本信息

  • 批准号:
    9871272
  • 负责人:
  • 金额:
    $ 46.74万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    1998
  • 资助国家:
    美国
  • 起止时间:
    1998-09-01 至 2002-08-31
  • 项目状态:
    已结题

项目摘要

9871272FarmerRecently, researchers at the New Jersey Institute of Technology pioneered a key technology for future micro-electrical-mechanical systems (MEMS) research and development, in which ultra-thin single crystal silicon membranes (up to 4" in diameter and as thin as 2 micrometers) may be bonded to a variety of substrates. This technology will open up a new class of device possibilities that require single-crystal silicon rather than the polycrystalline layers deposited by non-bonding methods. However, extension of this technology to practical MEMS applications requires rapid, deep etching of localized areas through the bonded wafers to the underlying layers to create free standing structures. In order to fill this need, a Deep Reactive Ion Etching (DRIE) system will be acquired with funding from the Major Research Instrumentation program. DRIE is a state-of-the-art process that is capable of extremely high silicon removal rates, high selectivity to masking materials, and precise etch profile control. The DRIE system will complement the unique wafer bonding capabilities of NJIT and enable a wide array of research activities across several disciplines. The goals of this facility are 1) to provide access to advanced state-of-the-art process methods and equipment to perform complex design, modeling, simulation, process characterization and prototype development, and 2) to generate synergy between industry and NJIT students, faculty and staff, leading to joint research opportunities and efficient technology transfer. With over 40 graduate and undergraduate students across a range of disciplines using the cleanroom facility each year, the DRIE, as a centerpiece tool of the facility, is expected to have a significant impact on their research, advanced training and contacts with industry. NJIT heads the state's micro-electro-mechanical systems (MEMS) research and development effort through the state-supported New Jersey MEMS center in collaboration with Rutgers University, Stevens Institute of Technology, and a number of industrial partners, including Lucent Technologies, Kearfott Guidance Systems, and others. %%%The combination of the deep reactive ion etching system, acquired using Major Research Instrumentation funding, and the ultra-thin wafer bonding capability will push NJIT to the forefront of MEMS research and development. The DRIE instrumentation would form the cornerstone of NJIT's MEMS effort, and, by extension through our industrial partners, would lead to the further development of this emerging technology in the state of New Jersey and beyond. It would enable the integration of microelectronic devices with a wide array of MEMS research, including sensors and actuators, microfluidics, biomechanics and optics, providing a unified research effort across at least six undergraduate and graduate degree areas in both engineering and arts and sciences, including physics, electrical engineering, materials science, mechanical engineering, biomedical engineering and manufacturing. ***
9871272农民最近,新泽西理工学院的研究人员开创了一项未来微机电系统(MEMS)研究和开发的关键技术,其中超薄单晶硅膜(直径可达4”,薄至2微米)可粘合到各种衬底上。 这项技术将开辟一种新的设备可能性,需要单晶硅,而不是通过非键合方法沉积的多晶层。 然而,将该技术扩展到实际的MEMS应用需要快速、深蚀刻局部区域,通过键合的晶片到下面的层,以创建独立的结构。 为了满足这一需求,深反应离子蚀刻(DRIE)系统将获得主要研究仪器计划的资助。 DRIE是一种最先进的工艺,能够实现极高的硅去除率、对掩模材料的高选择性和精确的蚀刻轮廓控制。 DRIE系统将补充NJIT独特的晶圆键合能力,并支持多个学科的广泛研究活动。该设施的目标是1)提供先进的最先进的工艺方法和设备,以执行复杂的设计,建模,模拟,工艺表征和原型开发,以及2)在行业和NJIT学生,教师和员工之间产生协同作用,从而获得联合研究机会和有效的技术转让。每年有超过40名研究生和本科生使用洁净室设施,DRIE作为该设施的核心工具,预计将对他们的研究,高级培训和与行业的联系产生重大影响。 NJIT通过国家支持的新泽西MEMS中心与罗格斯大学、史蒂文斯理工学院以及包括朗讯科技、Kearfott制导系统等在内的许多工业合作伙伴合作,领导该州的微机电系统(MEMS)研究和开发工作。 利用Major Research Instrumentation基金收购的深反应离子蚀刻系统与超薄晶圆键合能力的结合,将NJIT推向MEMS研究和开发的前沿。DRIE仪器将成为NJIT MEMS努力的基石,并通过我们的工业合作伙伴延伸,将导致这一新兴技术在新泽西州及其他地区的进一步发展。它将使微电子设备与广泛的MEMS研究(包括传感器和致动器、微流体、生物力学和光学)相集成,为工程、艺术和科学领域的至少六个本科和研究生学位领域提供统一的研究工作,包括物理学、电气工程、材料科学、机械工程、生物医学工程和制造业。***

项目成果

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Kenneth Farmer其他文献

Kenneth Farmer的其他文献

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{{ truncateString('Kenneth Farmer', 18)}}的其他基金

Acquisition of Instrumentation for Research and Development of Bonded Ultra Thin Silicon Wafers
收购用于研究和开发键合超薄硅片的仪器
  • 批准号:
    9601937
  • 财政年份:
    1996
  • 资助金额:
    $ 46.74万
  • 项目类别:
    Standard Grant
CAREER: Ultra-Thin Oxides on Silicon and Thin Silicon Wafer Bonding
职业:硅上超薄氧化物和薄硅晶圆键合
  • 批准号:
    9624798
  • 财政年份:
    1996
  • 资助金额:
    $ 46.74万
  • 项目类别:
    Standard Grant
Ultra-Thin Silicon Wafer Bonding
超薄硅片键合
  • 批准号:
    9529616
  • 财政年份:
    1995
  • 资助金额:
    $ 46.74万
  • 项目类别:
    Standard Grant
Tunneling Measurements for Electro-Structural Analysis of Ultra-thin Dielectrics on Silicon
用于硅上超薄电介质电结构分析的隧道测量
  • 批准号:
    9313937
  • 财政年份:
    1993
  • 资助金额:
    $ 46.74万
  • 项目类别:
    Continuing grant

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加利福尼亚州金银岛岩土工程实验规划委员会,深层仪器阵列
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