Acquisition of Instrumentation for Deep Reactive Ion Etching of Ultra-Thin Bonded Wafers
Acquisition of Instrumentation for Deep Reactive Ion Etching of Ultra-Thin Bonded Wafers
批准号:
9871272
负责人:
Kenneth Farmer
金额:
$46.74万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1998
资助国家:
美国
项目状态:
已结题
起止时间:
1998-09-01 至 2002-08-31
中文摘要
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英文摘要
9871272FarmerRecently, researchers at the New Jersey Institute of Technology pioneered a key technology for future micro-electrical-mechanical systems (MEMS) research and development, in which ultra-thin single crystal silicon membranes (up to 4" in diameter and as thin as 2 micrometers) may be bonded to a variety of substrates. This technology will open up a new class of device possibilities that require single-crystal silicon rather than the polycrystalline layers deposited by non-bonding methods. However, extension of this technology to practical MEMS applications requires rapid, deep etching of localized areas through the bonded wafers to the underlying layers to create free standing structures. In order to fill this need, a Deep Reactive Ion Etching (DRIE) system will be acquired with funding from the Major Research Instrumentation program. DRIE is a state-of-the-art process that is capable of extremely high silicon removal rates, high selectivity to masking materials, and precise etch profile control. The DRIE system will complement the unique wafer bonding capabilities of NJIT and enable a wide array of research activities across several disciplines. The goals of this facility are 1) to provide access to advanced state-of-the-art process methods and equipment to perform complex design, modeling, simulation, process characterization and prototype development, and 2) to generate synergy between industry and NJIT students, faculty and staff, leading to joint research opportunities and efficient technology transfer. With over 40 graduate and undergraduate students across a range of disciplines using the cleanroom facility each year, the DRIE, as a centerpiece tool of the facility, is expected to have a significant impact on their research, advanced training and contacts with industry. NJIT heads the state's micro-electro-mechanical systems (MEMS) research and development effort through the state-supported New Jersey MEMS center in collaboration with Rutgers University, Stevens Institute of Technology, and a number of industrial partners, including Lucent Technologies, Kearfott Guidance Systems, and others. %%%The combination of the deep reactive ion etching system, acquired using Major Research Instrumentation funding, and the ultra-thin wafer bonding capability will push NJIT to the forefront of MEMS research and development. The DRIE instrumentation would form the cornerstone of NJIT's MEMS effort, and, by extension through our industrial partners, would lead to the further development of this emerging technology in the state of New Jersey and beyond. It would enable the integration of microelectronic devices with a wide array of MEMS research, including sensors and actuators, microfluidics, biomechanics and optics, providing a unified research effort across at least six undergraduate and graduate degree areas in both engineering and arts and sciences, including physics, electrical engineering, materials science, mechanical engineering, biomedical engineering and manufacturing. ***
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Acquisition of Instrumentation for Research and Development of Bonded Ultra Thin Silicon Wafers
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批准号:9601937
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项目类别:Standard Grant
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资助金额:$20.26万
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财政年份:1996
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负责人:Kenneth Farmer
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依托单位:
CAREER: Ultra-Thin Oxides on Silicon and Thin Silicon Wafer Bonding
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批准号:9624798
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项目类别:Standard Grant
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资助金额:$25.0万
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财政年份:1996
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负责人:Kenneth Farmer
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依托单位:
Ultra-Thin Silicon Wafer Bonding
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批准号:9529616
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项目类别:Standard Grant
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资助金额:$3.5万
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财政年份:1995
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负责人:Kenneth Farmer
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依托单位:
Tunneling Measurements for Electro-Structural Analysis of Ultra-thin Dielectrics on Silicon
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批准号:9313937
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项目类别:Continuing grant
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资助金额:$0.0万
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财政年份:1993
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负责人:Kenneth Farmer
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依托单位:
海外基金