Electron Tunneling Studies of Variable Range Hopping Conductors
可变范围跳跃导体的电子隧道研究
基本信息
- 批准号:9316803
- 负责人:
- 金额:$ 24万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Continuing Grant
- 财政年份:1994
- 资助国家:美国
- 起止时间:1994-04-01 至 1998-03-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
9316803 Lee Technical abstract: Many materials that are barely on the insulating side of a metal-insulator transition conduct electricity by variable range hopping (VRH), for which the conductivity depends on temperature as exp(T0/T)1/n, for integer n 1. While VRH by non-interacting electrons is well understood, recent experiments have shown that VRH at low temperatures in the presence of magnetic perturbations leads to new and unexpected phenomena, including the possibility of a new spin-charge coupled quasiparticle. It is planned to investigate the many-body density-of-states and elementary excitation spectrum in VRH conductors using electron tunneling and magneto transport experiments at low temperatures and high magnetic fields. The goal is to directly measure the proposed energy gap structure inferred from conductivity data and to elucidate the effects of magnetic scattering on hopping conduction. Non-technical abstract: A fundamental problem in condensed matter physics is concerned with the mechanism of electrical conduction in a solid. While the understanding of common metals and semiconductors is highly developed, many materials exhibit unusual, often poorly understood electrical behavior. A commonly observed form of unconventional electrical conduction is known as variable- range hopping (VRH). Since many diverse technologically important solids are VRH conductors, it is of practical importance to develop a more profound physical understanding of this process. Recent experiments have shown that VRH conduction can yield complex and completely unexpected behavior. In order to elucidate the fundamental principles which underlie this electrical conductiom it is proposed to study directly rhe microscopic properties of the charge carriers in different VRH conductors. ***
小行星9316803 技术摘要:许多几乎不在金属-绝缘体转变的绝缘侧上的材料通过可变范围跳跃(弗赫)导电,其中电导率取决于温度,如exp(T0/T)1/n,对于整数n 1。 虽然弗赫由非相互作用的电子是很好地理解,最近的实验表明,弗赫在低温下在磁扰动的存在下导致新的和意想不到的现象,包括一个新的自旋电荷耦合准粒子的可能性。 计划在低温和高磁场下使用电子隧穿和磁输运实验来研究弗赫导体中的多体态密度和元激发谱。 我们的目标是直接测量建议的能隙结构推断电导率数据,并阐明磁散射对跳跃传导的影响。 非技术摘要:凝聚态物理学中的一个基本问题与固体中的导电机制有关。 虽然对普通金属和半导体的理解已经高度发展,但许多材料表现出不寻常的,通常知之甚少的电学行为。 一种常见的非常规导电形式被称为变程跳变(弗赫). 由于许多不同的技术上重要的固体是弗赫导体,这是具有实际意义的发展更深刻的物理理解这一过程。 最近的实验表明,弗赫传导可以产生复杂和完全出乎意料的行为。 为了阐明这种导电性的基本原理,建议直接研究不同弗赫导体中载流子的微观性质。 ***
项目成果
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Mark Lee其他文献
Rehabilitation medicine in palliative care of chronic neurological conditions
康复医学在慢性神经系统疾病姑息治疗中的应用
- DOI:
10.1136/bmjspcare-2020-002415 - 发表时间:
2020 - 期刊:
- 影响因子:2.7
- 作者:
K. Nair;B. Chandler;Mark Lee;D. Oliver;K. Sansam;Lenyalo King;Suzanne Paisley;A. Sutton;A. Cantrell - 通讯作者:
A. Cantrell
Systematic effects in thin film tunnel junctions of YBa2Cu3O7-δ
YBa2Cu3O7-δ薄膜隧道结的系统效应
- DOI:
10.1016/0038-1098(89)91077-6 - 发表时间:
1989 - 期刊:
- 影响因子:2.1
- 作者:
Mark Lee;M. Naito;A. Kapitulnik;M. Beasley - 通讯作者:
M. Beasley
20.5 1.4THz, −13dBm-EIRP frequency multiplier chain using symmetric- and asymmetric-CV varactors in 65nm CMOS
20.5 1.4THz、−13dBm-EIRP 倍频器链,采用 65nm CMOS 中的对称和非对称 CV 变容二极管
- DOI:
- 发表时间:
2016 - 期刊:
- 影响因子:0
- 作者:
Z. Ahmad;Mark Lee;K. O. Kenneth - 通讯作者:
K. O. Kenneth
Examining the Efficacy of ChatGPT in Marking Short-Answer Assessments in an Undergraduate Medical Program
检验 ChatGPT 在本科医学项目简答评估评分中的功效
- DOI:
- 发表时间:
2024 - 期刊:
- 影响因子:0
- 作者:
Leo Morjaria;Levi Burns;Keyna Bracken;Anthony J Levinson;Quang N. Ngo;Mark Lee;Matthew Sibbald - 通讯作者:
Matthew Sibbald
Functional anatomic relationship between brain-stem tumors and cranial motor nuclei.
脑干肿瘤与颅运动核之间的功能解剖关系。
- DOI:
10.1097/00006123-199610000-00028 - 发表时间:
1996 - 期刊:
- 影响因子:4.8
- 作者:
Nobu Morota;V. Deletis;Mark Lee;Fred Epstein - 通讯作者:
Fred Epstein
Mark Lee的其他文献
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{{ truncateString('Mark Lee', 18)}}的其他基金
GOALI: Experimental Tests of Nonequilibrium Thermodynamics Beyond the Onsager Relation: Nonlinear and Far-From-Equilibrium Thermoelectrics
目标:超越 Onsager 关系的非平衡热力学实验测试:非线性和远离平衡热电学
- 批准号:
2206888 - 财政年份:2022
- 资助金额:
$ 24万 - 项目类别:
Standard Grant
GOALI: Integrated Circuit Silicon Nanowire Thermoelectric Generators for On-chip Micropower Generation
GOALI:用于片上微发电的集成电路硅纳米线热电发电机
- 批准号:
1707581 - 财政年份:2017
- 资助金额:
$ 24万 - 项目类别:
Standard Grant
GOALI: Pioneering a Quantum Mechanical Route Towards Transforming the Future of Industrial Silicon Electronics
GOALI:开创量子机械路线,改变工业硅电子的未来
- 批准号:
1403421 - 财政年份:2014
- 资助金额:
$ 24万 - 项目类别:
Standard Grant
Spectroscopy of Coulomb Interactions in Disordered Electronic Solids
无序电子固体中库仑相互作用的光谱学
- 批准号:
9700482 - 财政年份:1997
- 资助金额:
$ 24万 - 项目类别:
Continuing Grant
CAREER: Application of a High-Tc Superconductor for Large Bandwidth Far-Infrared Mixing Receivers
职业:高温超导体在大带宽远红外混合接收器中的应用
- 批准号:
9623893 - 财政年份:1996
- 资助金额:
$ 24万 - 项目类别:
Continuing Grant
Acquisition of a Compact Dilution Refrigerator
购买紧凑型稀释冰箱
- 批准号:
9317417 - 财政年份:1993
- 资助金额:
$ 24万 - 项目类别:
Standard Grant
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