Cross-Sectional Scanning Probe Microscopy/Spectroscopy of Semiconductor Heterostructures

半导体异质结构的横截面扫描探针显微镜/光谱学

• 批准号: 9402938
• 负责人: Chih-Kang Shih
• 金额: $ 24万
• 依托单位: University of Texas at Austin
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-08-15 至 1998-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9402938&HistoricalAwards=false
• 关键词: Cross; Sectional; Scanning; Probe; Microscopy

9402938 Shih The Principal Investigator will investigate the structural, electronic and optoelectronic properties of semiconductor heterostructures and the correlation between them by using three forms of scanning probe microscopy (STM): scanning tunneling microscopy and spectroscopy (STM/S), tip-induced luminescence, and localized photoluminescence based on scanning near field optical microscopy (SNOM). The unprecedented spatial resolution of these techniques make them the ideal tools for microscopic investigations of these properties at the heterostructure interfaces. The work will focus on: (1) band discontinuities; (2) metallurgical controllability; and (3) effects of structural defects on the electronic and optoelectronic properties. % % % % This project will develop novel experimental methods to study the physical properties at the interface between two different semiconductors. The study will allow direct visualization of the arrangement of different atoms at such interfaces. More importantly the study will allow one to understand how these atomic arrangements influence the behavior of electrons and the light emitting properties in electronic devices. The results will have immediate technological impact on the development of future electronic devices to be used in the next generation computers and optical communications. ***

9402938 SHIH首席研究者将通过使用三种形式的扫描探针显微镜（STM）（STM）来研究半导体异质结构的结构，电子和光电特性以及它们之间的相关性：扫描示例隧道隧道显微镜和光谱均基于接近光谱的光学启动光学启动亮度亮度，并启用了触发光学启动亮度亮度，并扫描启用光学启动亮度，并扫描启用光学启动式光学启动，并扫描触发式光学启动，并扫描触发光学镜头，并扫描触发光学镜头和光谱仪。 （SNOM）。 这些技术的前所未有的空间分辨率使它们成为对异质结构界面上这些特性进行微观研究的理想工具。 工作将重点放在：（1）乐队不连续性； （2）冶金可控性； （3）结构缺陷对电子和光电特性的影响。 ％％％％这个项目将开发新的实验方法，以研究两个不同半导体之间的界面的物理特性。 该研究将允许在此类界面上直接可视化不同原子的排列。 更重要的是，该研究将使人们能够了解这些原子布置如何影响电子设备中电子的行为和发光特性。 结果将对下一代计算机和光学通信的未来电子设备的开发产生直接的技术影响。 ***