Tailoring electronic and photonic properties of van der Waals semiconductor heterostructures

定制范德华半导体异质结构的电子和光子特性

基本信息

  • 批准号:
    1808751
  • 负责人:
  • 金额:
    $ 42万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2018
  • 资助国家:
    美国
  • 起止时间:
    2018-07-01 至 2021-06-30
  • 项目状态:
    已结题

项目摘要

Nontechnical description: The ability to tailor materials at the nanoscale has been a key enabler for many technology breakthroughs, exemplified by the continuing development of semiconductors for computing and information technologies. Over the last few years, a new class of electronic materials has emerged - atomic crystals with a thicknesses of only one or a few atoms, known as two-dimensional materials. These materials systems provide a new platform for electronic and photonic devices. One interesting approach to investigating the nature of these materials is by stacking various types of them to form new hybrid layered materials. The electronic properties of the resulting stacks are governed by electrical forces and interactions between the various layers. This research explores the controlling factors that determine the interlayer interactions. Findings from this study are used to achieve rational design of stacks with desirable electronic and optical properties, which may be suitable for new types of optoelectronic devices. Educationally, a special topic course work is designed to introduce this new frontier of materials research to graduate and undergraduate students. In addition, a laboratory-based discovery process is designed to reach out to high school students through a summer internship program.Technical description: The introduction of semiconductor heterostructures enabled many novel designs of electronics and photonics, leading to transformative semiconductor technologies. The recent emergence of atomically thin crystalline two-dimensional (2D) semiconductors creates exciting new opportunities for pushing semiconductor heterostructures towards a new frontier. In particular, vertically stacked van der Waals (vdW) heterostructures were quickly recognized as a powerful platform for creating atomically thin heterostructures with great design flexibility. A central scientific issue is the role of interlayer coupling, which can alter the electronic structures of each vdW layer individually, and the stack as a whole. This project systematically investigates how interlayer atomic alignment impacts the electronic structure of vdW heterostructures. Moreover, using interlayer coupling as the design parameter, the research creates a sequence of 2D electronic superlattices with novel electronic and photonic properties. Scientifically, activities provide researchers in the field with important design parameters to tailor the electronic and photonic structures of vdW heterostructures. Technologically, the new generation of electronic and photonic materials and devices driven by this new line of research have important applications that benefit society. Educationally, graduate students trained through this study gain a broad scientific perspective. Through the design of a special course, the PI continues to enhance campus-wide graduate/undergraduate education in nanoscience and nanotechnology. The research also enables broadening participation of students from underrepresented groups.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
非技术描述:在纳米尺度上定制材料的能力是许多技术突破的关键促成因素,例如用于计算和信息技术的半导体的持续发展。在过去的几年里,出现了一类新的电子材料——厚度只有一个或几个原子的原子晶体,被称为二维材料。这些材料系统为电子和光子器件提供了一个新的平台。研究这些材料性质的一个有趣方法是将不同类型的材料堆叠起来,形成新的混合层状材料。所产生的堆叠的电子特性由电作用力和各层之间的相互作用决定。本研究探讨了决定层间相互作用的控制因素。该研究结果可用于实现具有理想电子和光学特性的堆叠的合理设计,这可能适用于新型光电器件。在教育方面,我们设计了一个专题课程,向研究生和本科生介绍这一材料研究的新前沿。此外,一个以实验室为基础的发现过程旨在通过暑期实习项目接触到高中生。技术描述:半导体异质结构的引入使许多新颖的电子和光子学设计成为可能,从而导致半导体技术的变革。最近原子薄晶体二维(2D)半导体的出现为将半导体异质结构推向新的前沿创造了令人兴奋的新机会。特别是,垂直堆叠的范德华异质结构(vdW)很快被认为是创建具有极大设计灵活性的原子薄异质结构的强大平台。一个核心的科学问题是层间耦合的作用,它可以单独改变每个vdW层的电子结构,也可以改变整个堆栈。本项目系统地研究了层间原子排列如何影响vdW异质结构的电子结构。此外,利用层间耦合作为设计参数,该研究创建了一系列具有新颖电子和光子特性的二维电子超晶格。在科学上,活动为该领域的研究人员提供了重要的设计参数,以定制vdW异质结构的电子和光子结构。从技术上讲,新一代的电子和光子材料和器件由这条新的研究路线驱动,具有重要的应用,造福社会。在教育方面,通过这项研究培养的研究生获得了广阔的科学视野。通过设计一门特别课程,学院继续加强校园内纳米科学和纳米技术的研究生/本科生教育。这项研究还能够扩大来自代表性不足群体的学生的参与。该奖项反映了美国国家科学基金会的法定使命,并通过使用基金会的知识价值和更广泛的影响审查标准进行评估,被认为值得支持。

项目成果

期刊论文数量(11)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Critical role of parallel momentum in quantum well state couplings in multi-stacked nanofilms: An angle resolved photoemission study
平行动量在多层纳米薄膜量子阱态耦合中的关键作用:角分辨光电子研究
  • DOI:
    10.1063/5.0022706
  • 发表时间:
    2020
  • 期刊:
  • 影响因子:
    1.6
  • 作者:
    Lee, Woojoo;Pan, Chi-Ruei;Nam, Hyoungdo;Chou, Mei-Yin;Shih, Chih-Kang
  • 通讯作者:
    Shih, Chih-Kang
PTCDA Molecular Monolayer on Pb Thin Films: An Unusual π -Electron Kondo System and Its Interplay with a Quantum-Confined Superconductor
Pb 薄膜上的 PTCDA 分子单层:一种不寻常的近藤电子系统及其与量子限制超导体的相互作用
  • DOI:
    10.1103/physrevlett.127.186805
  • 发表时间:
    2021
  • 期刊:
  • 影响因子:
    8.6
  • 作者:
    Lu, Shuangzan;Nam, Hyoungdo;Xiao, Penghao;Liu, Mengke;Guo, Yanping;Bai, Yusong;Cheng, Zhengbo;Deng, Jinghao;Li, Yanxing;Zhou, Haitao
  • 通讯作者:
    Zhou, Haitao
Tailoring excitonic states of van der Waals bilayers through stacking configuration, band alignment, and valley spin
  • DOI:
    10.1126/sciadv.aax7407
  • 发表时间:
    2019-12-01
  • 期刊:
  • 影响因子:
    13.6
  • 作者:
    Hsu, Wei-Ting;Lin, Bo-Han;Shih, Chih-Kang
  • 通讯作者:
    Shih, Chih-Kang
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Chih-Kang Shih其他文献

Monolayer 1T-NbSe2 as a 2D-correlated magnetic insulator
  • DOI:
    DOI: 10.1126/sciadv.abi6339
  • 发表时间:
    2021
  • 期刊:
  • 影响因子:
  • 作者:
    Mengke Liu;Joshua Leveillee;Shuangzan Lu;Jia Yu;Hyunsue Kim;Cheng Tian;Youguo Shi;Keji Lai;Chendong Zhang;Feliciano Giustino;Chih-Kang Shih
  • 通讯作者:
    Chih-Kang Shih
Tuning of Two-Dimensional Plasmon–Exciton Coupling in Full Parameter Space: A Polaritonic Non-Hermitian System
全参数空间中二维等离子体激子耦合的调谐:极化非厄米系统
  • DOI:
    10.1021/acs.nanolett.1c00198
  • 发表时间:
    2021
  • 期刊:
  • 影响因子:
    10.8
  • 作者:
    Yungang Sang;Chun-Yuan Wang;Soniya S. Raja;Chang-Wei Cheng;Chiao-Tzu Huang;Chun-An Chen;Xin-Quan Zhang;Hyeyoung Ahn;Chih-Kang Shih;Yi-Hsien Lee;Jinwei Shi;Shangjr Gwo
  • 通讯作者:
    Shangjr Gwo
Excitons in semiconductor moiré superlattices
半导体莫尔超晶格中的激子
  • DOI:
    10.1038/s41565-021-01068-y
  • 发表时间:
    2022-03-14
  • 期刊:
  • 影响因子:
    34.900
  • 作者:
    Di Huang;Junho Choi;Chih-Kang Shih;Xiaoqin Li
  • 通讯作者:
    Xiaoqin Li
Robust supermoiré pattern in large-angle single-twist bilayers
大角度单扭曲双层膜中的稳健超级莫尔图案
  • DOI:
    10.1038/s41567-025-02914-9
  • 发表时间:
    2025-05-16
  • 期刊:
  • 影响因子:
    18.400
  • 作者:
    Yanxing Li;Chuqiao Shi;Fan Zhang;Xiaohui Liu;Yuan Xue;Viet-Anh Ha;Qiang Gao;Chengye Dong;Yu-Chuan Lin;Luke N. Holtzman;Nicolás Morales-Durán;Hyunsue Kim;Yi Jiang;Madisen Holbrook;James Hone;Katayun Barmak;Joshua A. Robinson;Xiaoqin Li;Feliciano Giustino;Eslam Khalaf;Yimo Han;Chih-Kang Shih
  • 通讯作者:
    Chih-Kang Shih
Experimental signature of layer skyrmions and implications for band topology in twisted WSe2 bilayers
层状斯格明子的实验特征及其对扭曲 WSe2 双层膜能带拓扑的影响
  • DOI:
    10.1038/s41567-025-02876-y
  • 发表时间:
    2025-05-01
  • 期刊:
  • 影响因子:
    18.400
  • 作者:
    Fan Zhang;Nicolás Morales-Durán;Yanxing Li;Wang Yao;Jung-Jung Su;Yu-Chuan Lin;Chengye Dong;Xiaohui Liu;Fu-Xiang Rikudo Chen;Hyunsue Kim;Kenji Watanabe;Takashi Taniguchi;Xiaoqin Li;Joshua A. Robinson;Allan H. Macdonald;Chih-Kang Shih
  • 通讯作者:
    Chih-Kang Shih

Chih-Kang Shih的其他文献

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{{ truncateString('Chih-Kang Shih', 18)}}的其他基金

Tailoring and probing electronic/magnetic structure of engineered magnetic topological insulators
工程磁拓扑绝缘体的电子/磁结构的定制和探测
  • 批准号:
    2219610
  • 财政年份:
    2022
  • 资助金额:
    $ 42万
  • 项目类别:
    Standard Grant
Manipulating 2D Superconductivity through atomic scale control of boundary conditions
通过边界条件的原子尺度控制来操纵二维超导
  • 批准号:
    1506678
  • 财政年份:
    2015
  • 资助金额:
    $ 42万
  • 项目类别:
    Standard Grant
Advanced Accelerating Structures Based on Metamaterials
基于超材料的先进加速结构
  • 批准号:
    1415547
  • 财政年份:
    2014
  • 资助金额:
    $ 42万
  • 项目类别:
    Standard Grant
FRG: Quantum Tuning of Superconducting, Plasmonic, and Chemical Properties of Metallic Nanostructures
FRG:金属纳米结构的超导、等离子体和化学性质的量子调谐
  • 批准号:
    0906025
  • 财政年份:
    2009
  • 资助金额:
    $ 42万
  • 项目类别:
    Continuing Grant
IGERT: Atomic and Molecular Imaging of Interfaces/Defects in Electronic, Spintronic, and Organic/Inorganic Materials
IGERT:电子、自旋电子和有机/无机材料中界面/缺陷的原子和分子成像
  • 批准号:
    0549417
  • 财政年份:
    2006
  • 资助金额:
    $ 42万
  • 项目类别:
    Continuing Grant
FRG: Quantum Engineering of Metallic and Magnetic Nanostructures
FRG:金属和磁性纳米结构的量子工程
  • 批准号:
    0606485
  • 财政年份:
    2006
  • 资助金额:
    $ 42万
  • 项目类别:
    Continuing Grant
FRG-Quantum Engineering of Metallic and Magnetic Nanostructures
FRG-金属和磁性纳米结构的量子工程
  • 批准号:
    0306239
  • 财政年份:
    2003
  • 资助金额:
    $ 42万
  • 项目类别:
    Continuing Grant
NIRT: FRG: Collective and Quasiparticle Properties of Nanocrystals and Nano-Arrays
NIRT:FRG:纳米晶体和纳米阵列的集体和准粒子特性
  • 批准号:
    0210383
  • 财政年份:
    2002
  • 资助金额:
    $ 42万
  • 项目类别:
    Continuing Grant
FRG: Quantum Engineering of Metallic Nanostructures
FRG:金属纳米结构的量子工程
  • 批准号:
    0071893
  • 财政年份:
    2000
  • 资助金额:
    $ 42万
  • 项目类别:
    Continuing Grant
Cross-Sectional Scanning Probe Microscopy/Spectroscopy of Semiconductor Heterostructures
半导体异质结构的横截面扫描探针显微镜/光谱学
  • 批准号:
    9402938
  • 财政年份:
    1994
  • 资助金额:
    $ 42万
  • 项目类别:
    Continuing Grant

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