Vertical Isolation for Very Large Scale Integration Circuits Formed by Low Temperature Oxidation of Silicon

9412550 Alford研究将对硅与硅化铜接触的低温氧化过程有一个基本的了解。计划：1)研究现象的动力学，2)表征氧化层，3)利用生长速率对取向的依赖在集成电路中形成垂直隔离氧化物。我们希望表征生长动力学，以获得活化能，底物取向，通过使用植入标记物确定移动物种，以及掺杂剂和杂质的影响。通过金属氧化物电容器结构的电测量、成分、密度和杂质的离子束分析以及透射电子显微镜来评估微观结构特性，将对生长的氧化物的完整性进行量化。该计划的主要目标是对硅与硅化铜接触时的低温氧化有一个基本的了解。该项目的一个重要特点是培养学生在材料和加工研究的一个基本和技术上重要的领域。本研究将有助于提高用于计算、信息处理和远程通信的先进器件和集成电路的总体性能。＊＊＊

9412550 Alford Research will be carried out to develop a fundamental understanding of the processes associated with the low temperature oxidation of Silicon in contact with Cu silicide. It is planned to: 1) investigate the kinetics of the phenomena, 2)characterize the oxide layer, and 3)use the orientation dependence on growth rate to form vertical isolation oxides in integrated circuits. We expect to characterize the growth kinetics to obtain activation energy, substrate orientation, identity of moving species through the use of implanted markers, and the influence of dopants and impurities. The integrity of the grown oxide will be quantified by electrical measurements of metal oxide capacitor structures, ion beam analysis of composition, density, and impurities, and transmission electron microscopy to assess microstructure properties. %%% The primary goal of this program is to develop a fundamental understanding of the low temperature oxidation of Silicon in contact with Cu silicide. An important feature of the project is the training of students in a fundamentally and technologically significant area of materials and processing research. This research will contribute to improving the general perform ance of advanced devices and integrated circuits used in computing, information processing, and tele communica tions. ***