Vertical Isolation for Very Large Scale Integration Circuits Formed by Low Temperature Oxidation of Silicon

硅低温氧化形成的超大规模集成电路的垂直隔离

• 批准号: 9412550
• 负责人: Terry Alford
• 金额: $ 8.95万
• 依托单位: Arizona State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-02-01 至 1998-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9412550&HistoricalAwards=false
• 关键词: Vertical; Isolation; Very; Large; Scale

9412550 Alford Research will be carried out to develop a fundamental understanding of the processes associated with the low temperature oxidation of Silicon in contact with Cu silicide. It is planned to: 1) investigate the kinetics of the phenomena, 2)characterize the oxide layer, and 3)use the orientation dependence on growth rate to form vertical isolation oxides in integrated circuits. We expect to characterize the growth kinetics to obtain activation energy, substrate orientation, identity of moving species through the use of implanted markers, and the influence of dopants and impurities. The integrity of the grown oxide will be quantified by electrical measurements of metal oxide capacitor structures, ion beam analysis of composition, density, and impurities, and transmission electron microscopy to assess microstructure properties. %%% The primary goal of this program is to develop a fundamental understanding of the low temperature oxidation of Silicon in contact with Cu silicide. An important feature of the project is the training of students in a fundamentally and technologically significant area of materials and processing research. This research will contribute to improving the general perform ance of advanced devices and integrated circuits used in computing, information processing, and tele communica tions. ***

9412550阿尔福德研究将进行开发与低温氧化硅接触铜硅化物的过程的基本理解。 计划：1）研究该现象的动力学，2）表征氧化物层，以及3）使用对生长速率的取向依赖性来形成集成电路中的垂直隔离氧化物。 我们期望表征的生长动力学，以获得活化能，衬底取向，通过使用植入标记的移动物种的身份，以及掺杂剂和杂质的影响。 将通过金属氧化物电容器结构的电测量、成分、密度和杂质的离子束分析以及用于评估微结构性质的透射电子显微镜来量化生长的氧化物的完整性。该计划的主要目标是发展与铜硅化物接触的硅的低温氧化的基本理解。 该项目的一个重要特点是在材料和加工研究的基本和技术重要领域培训学生。 这项研究将有助于提高用于计算、信息处理和电信的先进设备和集成电路的总体性能。 ***