Integration of Compound Semiconductors on Flexible Substrates

化合物半导体在柔性基板上的集成

基本信息

  • 批准号:
    0902277
  • 负责人:
  • 金额:
    $ 70万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Continuing Grant
  • 财政年份:
    2009
  • 资助国家:
    美国
  • 起止时间:
    2009-07-01 至 2013-06-30
  • 项目状态:
    已结题

项目摘要

Technical. This project addresses fundamental materials science synthesis/processing research associated with the integration of high-speed electronics and highly functional sensors on flexible substrates. The primary approach is to explore ion-cutting as a means to transfer single crystalline III-V semiconductor layers onto flexible substrates. Current flexible electronics processes focus on deposited amorphous and/or polycrystalline Si on polymer substrates. Due to the limited tem-perature tolerance of polymers, the carrier mobility of these deposited layers is low and often un-acceptable for many applications even after subsequent laser annealing. The transfer research will focus on, but will not be limited to, the ion cutting technique. A major challenge is understanding ion damage, and how to reduce it in transferred layers. In this joint proposal, UCSD will focus on processing while ASU will focus on characterization. Anticipated benefits of the collaboration include: discovery of the fundamental mechanisms by which single crystalline III-V materials can be transferred to flexible substrates; and establishment of knowledge and expertise in the funda-mental mechanisms associated with synthesis/processing and characterization of devices fabri-cated from ion cut and layer transfer of semiconductor thin films. Non-Technical. The project addresses fundamental research issues in a topical area of elec-tronic/photonic materials science having technological relevance. The approach is expected to have a significant impact on understanding and enabling future high mobility and optoelectronic devices on flexible substrates. Research will be integrated into class lectures and undergraduate research. The undergraduate students working on this project will be encouraged to participate in annual undergraduate research conferences: EUREKA at UCSD and Fulton Series at ASU. Wafer integration concepts will be introduced to students enrolled in the Freshman Seminar series entitled 'The Technological World' and students from the Preuss School, a public school (grades 6-12) located on the UCSD campus, will be invited to attend the seminar Series. An established collaboration with the Los Alamos National Laboratory, based on the complementary nature of the facilities at both institutions, and past fruitful efforts will be continued. An established col-laboration with African researchers supported by the USAMI, Princeton University will also be continued. Personnel will visit and work with US graduate students on day-to-day research ac-tivities. Additionally, graduate students will be involved in Science is Fun educational outreach with the City of Phoenix Head Start teachers to develop a bilingual, inquiry based curriculum for students and parents. This project will also develop age appropriate scientific demonstrations modules (Collecting Light with Photoconductors and I Like My Days and My Electronics Flexible) based on the benchmarks established by the American Association for the Advancement of Science.
技术.该项目致力于基础材料科学合成/加工研究,与柔性基板上的高速电子和高功能传感器的集成相关。主要方法是探索离子切割作为将单晶III-V半导体层转移到柔性衬底上的手段。当前的柔性电子工艺集中于在聚合物衬底上沉积的非晶和/或多晶Si。由于聚合物的温度耐受性有限,这些沉积层的载流子迁移率低,并且即使在随后的激光退火之后,对于许多应用也常常是不可接受的。转移研究将集中于但不限于离子切割技术。一个主要的挑战是了解离子损伤,以及如何减少它在转移层。在这个联合提案中,UCSD将专注于处理,而ASU将专注于表征。合作的预期利益包括:发现单晶III-V材料可以转移到柔性衬底的基本机制;建立与半导体薄膜的离子切割和层转移制造的设备的合成/加工和表征相关的基本机制的知识和专业知识。非技术性。该项目涉及电子/光子材料科学领域的基础研究问题,具有技术相关性。该方法预计将对理解和实现柔性衬底上的未来高迁移率和光电器件产生重大影响。研究将融入课堂讲座和本科生研究。鼓励从事本项目的本科生参加年度本科生研究会议:UCSD的尤里卡和ASU的富尔顿系列。晶圆集成的概念将介绍给学生参加新生研讨会系列题为“技术世界”和学生从普鲁斯学校,公立学校(6-12年级)位于加州大学圣地亚哥分校校园,将被邀请参加研讨会系列。将继续与洛斯阿拉莫斯国家实验室建立基于两个机构设施互补性质的合作关系,并继续过去卓有成效的努力。还将继续开展由美援署、普林斯顿大学支助的与非洲研究人员的合作。人员将访问并与美国研究生一起进行日常研究活动。此外,研究生将参与科学是有趣的教育推广与凤凰城的头开始教师的城市,为学生和家长开发一个双语,探究为基础的课程。该项目还将根据美国科学促进会制定的基准,开发适合年龄的科学演示模块(用光电导体收集光和我喜欢我的日子和我的电子灵活)。

项目成果

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Terry Alford其他文献

The Impact of Two-Way Formative Feedback and Web-Enabled Resources on Student Resource Use and Performance in Materials Courses
双向形成性反馈和网络资源对材料课程中学生资源使用和表现的影响
Effect of Implementation of JTF Engagement and Feedback Pedagogy On Faculty Beliefs and Practice and on Student Performance
实施 JTF 参与和反馈教学法对教师信念和实践以及学生表现的影响
  • DOI:
  • 发表时间:
    2015
  • 期刊:
  • 影响因子:
    0
  • 作者:
    S. Krause;D. Baker;Terry Alford;Casey J. Ankeny;Adam R. Carberry;M. Koretsky;B. Brooks;C. Waters;B. Gibbons
  • 通讯作者:
    B. Gibbons
Concurrent quit & win and nicotine replacement therapy voucher giveaway programs: participant characteristics and predictors of smoking abstinence.
并发退出
Avoidance of smoky establishments: findings from Erie and Niagara Counties in New York.
避免烟雾弥漫的场所:来自纽约伊利县和尼亚加拉县的调查结果。
CREATING A LEARNING COMMUNITY AND BUILDING ENGAGEMENT IN ONLINE ENGINEERING COURSES USING ACTIVE LEARNING INSTRUCTIONAL PRACTICES AND EDTECH TOOLS
使用主动学习教学实践和教育技术工具创建学习社区并建立在线工程课程的参与度

Terry Alford的其他文献

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{{ truncateString('Terry Alford', 18)}}的其他基金

Materials World Network: Hydrogen Transport and Trapping in Ion-Cut Phenomena
材料世界网络:离子切割现象中的氢传输和捕获
  • 批准号:
    0602716
  • 财政年份:
    2006
  • 资助金额:
    $ 70万
  • 项目类别:
    Continuing Grant
Acquisition of In-Situ Heating and Ambient Controlled X-Ray Deffraction Tool: For Remote Research and Education
获取原位加热和环境控制的 X 射线衍射工具:用于远程研究和教育
  • 批准号:
    9704269
  • 财政年份:
    1997
  • 资助金额:
    $ 70万
  • 项目类别:
    Standard Grant
CAREER: Advanced Integrated Circuit Metallization: Research and Education
职业:先进集成电路金属化:研究和教育
  • 批准号:
    9624493
  • 财政年份:
    1996
  • 资助金额:
    $ 70万
  • 项目类别:
    Continuing Grant
Vertical Isolation for Very Large Scale Integration Circuits Formed by Low Temperature Oxidation of Silicon
硅低温氧化形成的超大规模集成电路的垂直隔离
  • 批准号:
    9412550
  • 财政年份:
    1995
  • 资助金额:
    $ 70万
  • 项目类别:
    Continuing Grant
RESEARCH INITIATION AWARD: Kinetics and Structure of Vertical Isolation for VLSI Circuits Formed by Low Temperature Oxidation of Silicon
研究启动奖:硅低温氧化形成的超大规模集成电路垂直隔离的动力学和结构
  • 批准号:
    9410399
  • 财政年份:
    1994
  • 资助金额:
    $ 70万
  • 项目类别:
    Standard Grant

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