CAREER: Advanced Integrated Circuit Metallization: Research and Education
CAREER: Advanced Integrated Circuit Metallization: Research and Education
批准号:
9624493
负责人:
Terry Alford
金额:
$26.7万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1996
资助国家:
美国
项目状态:
已结题
起止时间:
1996-05-15 至 2002-04-30
中文摘要
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英文摘要
9624493 Alford This CAREER research project addresses metallization and contact formation in silicon-based systems with the objective to create new fundamental knowledge in the science and engineering of interconnect materials systems and processes for future integrated circuit technologies. Interconnect materials systems to be studied include conductors, adhesion promoting layers and barrier layers. The research concentrates on metal conductor materials (silver and its alloys), but a substantial aspect of this investigation is the integrated systems approach to multilevel metallization that seeks greater understanding for addressing long term future solutions (lower resistivity Ag alloys) and more near term solutions (Cu alloys). %%% This research project will extend the investigator's preliminary advances in Cu metallization materials science and processing to integrate critical aspects of basic research advances with two Educational Innovations, Outreach to K-12, and a collaborative Community College activity with the Maricopa Community College District which includes courses televised to local industry. In addition to the educational outreach activities, an important feature of the program is the general integration of research and education through the training of graduate students in a fundamentally and technologically significant area. The proposed basic investigations of metallization and contact formation are expected to contribute fundamental materials science knowledge of technological relevance to advanced microelectronic devices and circuits. The knowledge and understanding gained from this research project is expected to contribute in a general way to improving the performance of advanced devices and circuits used in computing, information processing, and telecommunications by providing a fundamental understanding and a basis for designing and producing improved materials with greater reliability and performance. ***
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Integration of Compound Semiconductors on Flexible Substrates
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批准号:0902277
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项目类别:Continuing Grant
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资助金额:$70.0万
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财政年份:2009
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负责人:Terry Alford
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依托单位:
Materials World Network: Hydrogen Transport and Trapping in Ion-Cut Phenomena
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批准号:0602716
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项目类别:Continuing Grant
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资助金额:$30.0万
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财政年份:2006
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负责人:Terry Alford
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依托单位:
Acquisition of In-Situ Heating and Ambient Controlled X-Ray Deffraction Tool: For Remote Research and Education
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批准号:9704269
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项目类别:Standard Grant
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资助金额:$10.5万
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财政年份:1997
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负责人:Terry Alford
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依托单位:
Vertical Isolation for Very Large Scale Integration Circuits Formed by Low Temperature Oxidation of Silicon
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批准号:9412550
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项目类别:Continuing Grant
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资助金额:$8.95万
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财政年份:1995
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负责人:Terry Alford
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依托单位:
RESEARCH INITIATION AWARD: Kinetics and Structure of Vertical Isolation for VLSI Circuits Formed by Low Temperature Oxidation of Silicon
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批准号:9410399
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项目类别:Standard Grant
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资助金额:$9.0万
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财政年份:1994
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负责人:Terry Alford
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依托单位:
国内基金
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