1994 International Conference on Indium Phosphide and Related Materials, Santa Barbara, CA

1994 年磷化铟及相关材料国际会议，加利福尼亚州圣巴巴拉

• 批准号: 9412822
• 负责人: Evelyn Hu
• 金额: $ 0.6万
• 依托单位: University of California-Santa Barbara
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-04-15 至 1995-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9412822&HistoricalAwards=false
• 关键词: 1994; International; Conference; Indium; Phosphide

9412822 Hu An International Conference on InP and related materials is being held to address current topics in materials growth and characterization including several contemporary topics on epitaxy of increasing importance, namely: Epitaxy, Chemical Processes; Selective Epitaxy and Regrowth; Epitaxial Processes for Patterned Growth, Epitaxial Structures and Epitaxy for Device Applications. There are also a number of sessions dealing with devices, OEICs(optoelectronic integrated circuits) and device physics of advanced electronic and photonic devices based on InP with a strong emphasis on fundamental processes. Additionally there will be an opportunity to assess the field, and to establish ties between universities, research institutions, and industry. It is expected that top scientists in the field will attend, and that the Conference will provide an effective forum to discuss and delineate the critical scientific issues in this research area, and to consider and define the approaches and techniques needed to address them. %%% An evaluation of the progress and status of InP and related materials, and especially the critical materials research issues in epitaxy, processing, and the relationship of materials research to device and circuit fabrication along with current assessments of the most important contemporary research issues in this field will be of great value to the understanding and enhanced utilization of advanced materials in the field of electronics and photonics. ***

9412822 胡安 InP 及相关材料国际会议正在召开，旨在讨论材料生长和表征方面的当前主题，包括几个日益重要的外延的当代主题，即：外延、化学过程； 选择性外延和再生；用于器件应用的图案化生长、外延结构和外延的外延工艺。 还有许多会议涉及器件、OEIC（光电集成电路）以及基于 InP 的先进电子和光子器件的器件物理，重点关注基础工艺。 此外，还将有机会评估该领域，并在大学、研究机构和行业之间建立联系。 预计该领域的顶尖科学家将出席，会议将提供一个有效的论坛来讨论和描述该研究领域的关键科学问题，并考虑和定义解决这些问题所需的方法和技术。 %%% 评估InP及相关材料的进展和现状，特别是外延、加工中的关键材料研究问题，以及材料研究与器件和电路制造的关系，以及对该领域最重要的当代研究问题的当前评估，对于理解和加强先进材料在电子和光子学领域的利用具有重要价值。 ***