Materials World Network to Optimize the Growth of InGaN Quantum Dots within High Quality Optical Micro-Cavities

材料世界网络将优化高质量光学微腔内 InGaN 量子点的生长

• 批准号: 1008480
• 负责人: Evelyn Hu
• 金额: $ 54.6万
• 依托单位: Harvard University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2010
• 资助国家: 美国
• 起止时间: 2010-08-15 至 2013-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1008480&HistoricalAwards=false
• 关键词: Materials; World; Network; Optimize; Growth

This project seeks to achieve the optimized growth of InGaN quantum dots within integrated heterostructures that can be structured to form high quality optical cavities for the quantum dots. Ultimately, such integrated structures promise ultra-efficient optical sources in the visible range of the spectrum, controlled single photon sources, and new testbeds for the exploration of quantum information concepts, all operating at room temperature. The III-nitride materials have exceptional optical properties, but considerable challenges remain in the growth of low-defect materials in this system; this is particularly true for quantum dots.The fundamental optical performance of InGaN quantum dots could be enormously enhanced through their appropriate integration into high quality optical cavities, such as microdisks or photonic crystal structures. In addition, such cavities could serve as highly sensitive probes of the performance of the dots, monitoring the effects of local defects, charge traps or electric fields. There are numerous material challenges associated with the fabrication of such structures, and care must be taken to design the entire material structure in an integrative manner. This program will bring together the critical complementary expertise in the growth of InGaN quantum dots(Cambridge University), in the fabrication of cavities and structures in the GaN material system(Harvard), and in the optical characterization of those structures (Oxford). The program incorporates opportunities for all researchers, including postdocs, graduate students and undergraduates to participate in exchange visits, laboratory experiences and workshops among the partner institutions. The team will also communicate and exchange information through a web presence and video conferencing.

该项目旨在实现InGaN量子点在集成异质结构中的优化生长，该异质结构可以被构造成高质量的量子点光学腔。最终，这种集成结构有望在光谱的可见光范围内提供超高效光源、受控单光子源，以及探索量子信息概念的新试验台，所有这些都在室温下运行。III-氮化物材料具有优异的光学性能，但在该系统中低缺陷材料的生长仍然存在相当大的挑战，尤其是量子点。InGaN量子点的基本光学性能可以通过适当地集成到高质量的光学腔中而得到极大的提高，例如微盘或光子晶体结构。此外，这种空腔可以作为点性能的高灵敏度探测器，监测局部缺陷、电荷陷阱或电场的影响。这种结构的制造有许多实质性的挑战，必须谨慎地以综合的方式设计整个材料结构。该计划将汇集在InGaN量子点生长(剑桥大学)、GaN材料系统中空腔和结构的制造(哈佛大学)以及这些结构的光学表征(牛津大学)方面的关键互补专业知识。该方案为包括博士后、研究生和本科生在内的所有研究人员提供机会，让他们参与伙伴机构之间的互访、实验室体验和讲习班。该小组还将通过网络展示和视频会议进行沟通和交换信息。