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Materials World Network to Optimize the Growth of InGaN Quantum Dots within High Quality Optical Micro-Cavities

Materials World Network to Optimize the Growth of InGaN Quantum Dots within High Quality Optical Micro-Cavities
材料世界网络将优化高质量光学微腔内 InGaN 量子点的生长
批准号:
1008480
负责人:
Evelyn Hu
金额:
$54.6万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2010
资助国家:
美国
项目状态:
已结题
起止时间:
2010-08-15 至 2013-07-31

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中文摘要
翻译
该项目旨在实现InGaN量子点在集成异质结构中的优化生长,这些异质结构可以被构造为形成量子点的高质量光学腔。最终,这种集成结构有望在可见光谱范围内实现超高效光源,可控单光子源,以及探索量子信息概念的新试验平台,所有这些都在室温下运行。第三族氮化物材料具有特殊的光学性能,但在该系统中低缺陷材料的生长仍然存在相当大的挑战;对于量子点来说尤其如此,InGaN量子点的基本光学性能可以通过将其适当地集成到高质量的光学腔中来大大增强,例如微盘或光子晶体结构。此外,这种空腔可以作为点性能的高灵敏度探针,监测局部缺陷、电荷陷阱或电场的影响。有许多材料的挑战与制造这样的结构,必须注意以一体化的方式设计整个材料结构。该计划将汇集InGaN量子点(剑桥大学)生长,GaN材料系统(哈佛)中腔体和结构制造以及这些结构的光学表征(牛津)的关键互补专业知识。该计划为所有研究人员提供了机会,包括博士后,研究生和本科生,参加合作机构之间的交流访问,实验室经验和研讨会。该小组还将通过网络和视频会议沟通和交流信息。
英文摘要
This project seeks to achieve the optimized growth of InGaN quantum dots within integrated heterostructures that can be structured to form high quality optical cavities for the quantum dots. Ultimately, such integrated structures promise ultra-efficient optical sources in the visible range of the spectrum, controlled single photon sources, and new testbeds for the exploration of quantum information concepts, all operating at room temperature. The III-nitride materials have exceptional optical properties, but considerable challenges remain in the growth of low-defect materials in this system; this is particularly true for quantum dots.The fundamental optical performance of InGaN quantum dots could be enormously enhanced through their appropriate integration into high quality optical cavities, such as microdisks or photonic crystal structures. In addition, such cavities could serve as highly sensitive probes of the performance of the dots, monitoring the effects of local defects, charge traps or electric fields. There are numerous material challenges associated with the fabrication of such structures, and care must be taken to design the entire material structure in an integrative manner. This program will bring together the critical complementary expertise in the growth of InGaN quantum dots(Cambridge University), in the fabrication of cavities and structures in the GaN material system(Harvard), and in the optical characterization of those structures (Oxford). The program incorporates opportunities for all researchers, including postdocs, graduate students and undergraduates to participate in exchange visits, laboratory experiences and workshops among the partner institutions. The team will also communicate and exchange information through a web presence and video conferencing.
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会议论文
EAGER: Deterministic Placement of Qubits in Cavities for Strongly Coupled Quantum Repeaters
  • 批准号:
    1748106
  • 项目类别:
    Standard Grant
  • 资助金额:
    $30.0万
  • 财政年份:
    2017
  • 负责人:
    Evelyn Hu
  • 依托单位:
Insights on Science and Technology for Society (INSCITES)
REU Site - Internships in Nanosystems Science, Engineering, and Technology
REU Site - Internships in Nanosystems Science, Engineering and Technology (INSET)
国内基金
海外基金
国际心脏研究会第二十三届世界大会(XXIII World Congress ISHR)
  • 批准号:
    81942001
  • 项目类别:
    专项基金项目
  • 资助金额:
    10万元
  • 批准年份:
    2019
  • 负责人:
    朱毅
  • 依托单位: