Interaction of Germanium with Surfactants on the Silicon (100) Surface

锗与硅 (100) 表面表面活性剂的相互作用

• 批准号: 9413245
• 负责人: Lucy Seiberling
• 金额: --
• 依托单位: University of Florida
• 依托单位国家: 美国
• 项目类别: Continuing grant
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-08-15 至 1998-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9413245&HistoricalAwards=false
• 关键词: Interaction; Germanium; Surfactants; Silicon; 100

9413245 Seiberling The influence of impurities (surfactants) on the heteroepitaxial growth of germanium on the (100) surface of silicon will be investigated. This materials system has been chosen because it represents a model strained heteroepitaxial system, about which much is already known. Surface impurities, such as H or Sb, have been found to dramatically alter the morphology and structure of a growing layer. The transmission ion channeling technique will be applied to investigate the atomic structure and composition of monolayer germanium films growing on silicon in order to understand the microscopic role played by the impurity atoms. % % % % An important goal in materials science is to be able to build tailor-made materials with specific desirable properties. A major step in fulfilling this goal is to learn how to grow high quality crystalline layers of one material on another. Perfect growth can be inhibited by various factors, including a tendency of the overlayer to form islands, the creation of defects, etc. It has recently been shown that certain impurities, often referred to as surfactants, can have a dramatic effect on the structure and properties of a growing film. The mechanism by which surfactants influence growth of germanium on silicon, an important technological system, will be studied using a novel ion scattering technique. With this technique it is possible to measure the atomic structure and the composition of the growing film. ***

小行星9413245 研究了杂质（表面活性剂）对锗在硅（100）面异质外延生长的影响。 之所以选择这种材料系统，是因为它代表了一种模型应变异质外延系统，关于它已经有很多已知的东西。 表面杂质，如H或Sb，已被发现显着改变生长层的形态和结构。 利用透射离子沟道技术研究了生长在硅上的单层锗膜的原子结构和成分，以了解杂质原子所起的微观作用。 % % % % 材料科学的一个重要目标是能够构建具有特定理想特性的定制材料。 实现这一目标的主要步骤是学习如何在另一种材料上生长高质量的晶体层。 完美的生长可以被各种因素抑制，包括覆盖层形成岛的倾向，缺陷的产生等。最近已经表明，某些杂质，通常被称为表面活性剂，可以对生长膜的结构和性能产生巨大的影响。 利用离子散射技术研究了表面活性剂影响锗在硅上生长的机理。 利用这种技术，可以测量生长膜的原子结构和成分。 ***