Crystal Growth by Two Modified Bridgman Processes

通过两种改进的布里奇曼工艺进行晶体生长

• 批准号: 9415482
• 负责人: Sindo Kou
• 金额: $ 26.88万
• 依托单位: University of Wisconsin-Madison
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-08-01 至 1998-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9415482&HistoricalAwards=false
• 关键词: Crystal; Growth; Two; Modified; Bridgman

9415482 Kou The Bridgman process has been widely used for growing single crystals of electronic and photonic materials, but dopant segregation along the crystal, which degrades the crystal quality, has been a significant problem. Materials science research on bulk crystal growth will be carried out to develop a better fundamental understanding of the processes associated with segregation of dopants in the Bridgman growth process. Two modified Bridgman crystal growth processes will be studied, and their effectiveness in segregation reduction will be evaluated in single crystals of Indium Antimonide and Cadmium Zinc Telluride. Flow visualization of the transparent melt during the growth of Sodium Nitrate crystals will be conducted using a transparent crucible and furnace will be employed in these experimental studies to obtain additional information on the mechanisms operative in dopant segregation in electronic and photonic materials. %%% The primary goal of this program is to develop a fundamental understanding of the bulk crystal growth of Indium Antimonide and Cadmium Zinc Telluride, two important electronic and photonic materials. Greater control over the process of dopant segregation will allow higher quality crystals to be produced, which, in turn, will lead to improved device and circuit performance and reliability. An important feature of the program is the training of graduate and undergraduate students in a fundamentally and technologically significant area of materials and processing research. This research will contribute to improving the general perform ance of advanced devices and integrated circuits used in computing, information processing, and tele communica tions. ***

Bridgman工艺已被广泛用于生长电子和光子材料的单晶，但是掺杂剂沿晶体的偏析（segregation）沿着，这降低了晶体质量，一直是一个显著的问题。 将进行关于体晶体生长的材料科学研究，以更好地了解与布里奇曼生长过程中掺杂剂偏析相关的过程。 两个修改Bridgman晶体生长过程将进行研究，并在锑化铟和碲锌镉单晶中评估其在减少偏析方面的有效性。 流动可视化的透明熔体在硝酸钠晶体的生长过程中将进行使用透明坩埚和炉将采用在这些实验研究中，以获得更多的信息在电子和光子材料中的掺杂剂偏析的机制。 该计划的主要目标是发展锑化铟和碲锌镉，两个重要的电子和光子材料的体晶体生长的基本理解。 对掺杂剂偏析过程的更大控制将允许生产更高质量的晶体，这反过来将导致改进的器件和电路性能和可靠性。 该计划的一个重要特点是在材料和加工研究的基本和技术重要领域培养研究生和本科生。 这项研究将有助于提高用于计算、信息处理和电信的先进设备和集成电路的总体性能。 ***