Crystal Growth by Two Modified Bridgman Processes

9415482 Kou-Bridgman法广泛用于电子和光子材料的单晶生长，但杂质沿晶体的偏析一直是一个严重的问题，它降低了晶体的质量。将开展关于大块晶体生长的材料科学研究，以更好地从根本上了解布里奇曼生长过程中与杂质分离相关的过程。将研究两种改进的Bridgman晶体生长工艺，并将评估它们在锑铟和碲化锌镉单晶中减少偏析的效果。在硝酸钠晶体生长过程中，透明熔体的流动显示将使用透明坩埚和熔炉进行，以获得有关电子和光子材料中掺杂分离的更多信息。%本课程的主要目标是对两种重要的电子和光子材料--锑化铟和碲化锌镉的块状晶体生长有一个基本的了解。对掺杂分离过程的更好控制将允许生产更高质量的晶体，这反过来将导致改善器件和电路的性能和可靠性。该计划的一个重要特点是在材料和工艺研究的基础和技术方面对研究生和本科生进行培训。这项研究将有助于提高用于计算、信息处理和远程通信的先进器件和集成电路的综合性能。***

9415482 Kou The Bridgman process has been widely used for growing single crystals of electronic and photonic materials, but dopant segregation along the crystal, which degrades the crystal quality, has been a significant problem. Materials science research on bulk crystal growth will be carried out to develop a better fundamental understanding of the processes associated with segregation of dopants in the Bridgman growth process. Two modified Bridgman crystal growth processes will be studied, and their effectiveness in segregation reduction will be evaluated in single crystals of Indium Antimonide and Cadmium Zinc Telluride. Flow visualization of the transparent melt during the growth of Sodium Nitrate crystals will be conducted using a transparent crucible and furnace will be employed in these experimental studies to obtain additional information on the mechanisms operative in dopant segregation in electronic and photonic materials. %%% The primary goal of this program is to develop a fundamental understanding of the bulk crystal growth of Indium Antimonide and Cadmium Zinc Telluride, two important electronic and photonic materials. Greater control over the process of dopant segregation will allow higher quality crystals to be produced, which, in turn, will lead to improved device and circuit performance and reliability. An important feature of the program is the training of graduate and undergraduate students in a fundamentally and technologically significant area of materials and processing research. This research will contribute to improving the general perform ance of advanced devices and integrated circuits used in computing, information processing, and tele communica tions. ***