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Crystal Growth by Two Modified Bridgman Processes

Crystal Growth by Two Modified Bridgman Processes
通过两种改进的布里奇曼工艺进行晶体生长
批准号:
9415482
负责人:
Sindo Kou
金额:
$26.88万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1994
资助国家:
美国
项目状态:
已结题
起止时间:
1994-08-01 至 1998-07-31

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中文摘要
翻译
Bridgman工艺已广泛应用于电子和光子材料的单晶生长,但掺杂剂沿晶体偏析导致晶体质量下降一直是一个重要问题。将开展体晶生长的材料科学研究,以更好地理解与Bridgman生长过程中掺杂剂偏析相关的过程。研究了两种改性Bridgman晶体生长工艺,并对其在锑化铟和碲化镉锌单晶中的偏析还原效果进行了评价。在硝酸钠晶体生长过程中,透明熔体的流动可视化将使用透明坩埚和透明熔炉进行实验研究,以获得有关电子和光子材料中掺杂物偏析机制的额外信息。该计划的主要目标是对锑化铟和碲化镉锌这两种重要的电子和光子材料的体晶体生长有一个基本的了解。对掺杂分离过程的更好控制将允许生产更高质量的晶体,这反过来将导致设备和电路性能和可靠性的改进。该计划的一个重要特点是在材料和加工研究的基础和技术上具有重要意义的领域培养研究生和本科生。本研究将有助于提高用于计算、信息处理和远程通信的先进器件和集成电路的总体性能。***
英文摘要
9415482 Kou The Bridgman process has been widely used for growing single crystals of electronic and photonic materials, but dopant segregation along the crystal, which degrades the crystal quality, has been a significant problem. Materials science research on bulk crystal growth will be carried out to develop a better fundamental understanding of the processes associated with segregation of dopants in the Bridgman growth process. Two modified Bridgman crystal growth processes will be studied, and their effectiveness in segregation reduction will be evaluated in single crystals of Indium Antimonide and Cadmium Zinc Telluride. Flow visualization of the transparent melt during the growth of Sodium Nitrate crystals will be conducted using a transparent crucible and furnace will be employed in these experimental studies to obtain additional information on the mechanisms operative in dopant segregation in electronic and photonic materials. %%% The primary goal of this program is to develop a fundamental understanding of the bulk crystal growth of Indium Antimonide and Cadmium Zinc Telluride, two important electronic and photonic materials. Greater control over the process of dopant segregation will allow higher quality crystals to be produced, which, in turn, will lead to improved device and circuit performance and reliability. An important feature of the program is the training of graduate and undergraduate students in a fundamentally and technologically significant area of materials and processing research. This research will contribute to improving the general perform ance of advanced devices and integrated circuits used in computing, information processing, and tele communica tions. ***
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Microstructure Evolution and Hot Cracking in Arc Welds
  • 批准号:
    1904503
  • 项目类别:
    Standard Grant
  • 资助金额:
    $34.0万
  • 财政年份:
    2019
  • 负责人:
    Sindo Kou
  • 依托单位:
Solidification Cracking in Welds of Aluminum Alloys
  • 批准号:
    1500367
  • 项目类别:
    Standard Grant
  • 资助金额:
    $30.92万
  • 财政年份:
    2015
  • 负责人:
    Sindo Kou
  • 依托单位:
I/UCRC Forward Funding Year 1-4: Collaborative Research: Center for Integrative Materials Joining Science for Energy Applications
  • 批准号:
    1034695
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $27.5万
  • 财政年份:
    2010
  • 负责人:
    Sindo Kou
  • 依托单位:
Collaborative Research/Planning Grant: Center for Integrative Materials Joining Science for Energy Applications
  • 批准号:
    0934100
  • 项目类别:
    Standard Grant
  • 资助金额:
    $1.0万
  • 财政年份:
    2009
  • 负责人:
    Sindo Kou
  • 依托单位:
国内基金
海外基金
基于FP-Growth关联分析算法的重症患者抗菌药物精准决策模型的构建和实证研究
  • 批准号:
    2024Y9049
  • 项目类别:
    省市级项目
  • 资助金额:
    100.0万元
  • 批准年份:
    2024
  • 负责人:
    阮君山
  • 依托单位:
Research on the Rapid Growth Mechanism of KDP Crystal
  • 批准号:
    10774081
  • 项目类别:
    面上项目
  • 资助金额:
    45.0万元
  • 批准年份:
    2007
  • 负责人:
    滕冰
  • 依托单位: