Crystal Growth by a Modified Liquid-Encapsulated Czochralski Process

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9709944 Kou This project addresses bulk crystal growth of electronic and photonic materials by modifications to the liquid-encapsulated Czochralski technique with emphasis on reducing dopant segregation. The approach includes the study and introduction of a technique to achieve zone leveling for flattening the axial dopant profile; the idea is to maintain the growth melt at composition C0/k where C0 is the desired crystal composition, k, the segregation coefficient, and to supply additional material of composition C0 to the melt at the same rate as the crystal grows. %%% The project addresses basic research issues in a topical area of materials science having high technological relevance to electronics and photonics. The research will contribute basic materials science knowledge at a fundamental level to bulk crystalline materials required for fabrication of electronic/photonic devices and integrated circuitry. Additionally, the fundamental knowledge and understanding gained from the research is expected to contribute to improving the performance of advanced devices and circuits by providing a better understanding and a basis for producing improved materials, and materials combinations. An important feature of the program is the integration of research and education through the training of students in a research area essential to the field of electronics/photonics. ***