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Crystal Growth by a Modified Czochralski Process

Crystal Growth by a Modified Czochralski Process
采用改进的直拉法进行晶体生长
批准号:
9003328
负责人:
Sindo Kou
金额:
$17.05万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1991
资助国家:
美国
项目状态:
已结题
起止时间:
1991-01-15 至 1994-12-31

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中文摘要
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英文摘要
The goal of this research is to improve the quality of bulk crystals by study and modification of the temperature field at the crystal growth front. A modified Czochralski process which will incorporate a heater immersed in the melt just below the crystal growth will be studied experimentally to obtain a flat growth-front profile which is expected to provide bulk crystals with reduced defects. Primary studies at the PI's facility will be carried out with NaNO3, and the information learned transferred to the growth of other materials such as GaAs and InP, in collaboration with AT&T Laboratories.
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Microstructure Evolution and Hot Cracking in Arc Welds
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    2010
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Collaborative Research/Planning Grant: Center for Integrative Materials Joining Science for Energy Applications
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    0934100
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  • 资助金额:
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