Structure, Reactivity, and Models of the Silicon/Silicon Dioxide Interface

硅/二氧化硅界面的结构、反应性和模型

• 批准号: 9420558
• 负责人: Mark Banaszak Holl
• 金额: $ 5.64万
• 依托单位: Brown University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-01-15 至 1995-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9420558&HistoricalAwards=false
• 关键词: Structure; Reactivity; Models; Silicon; Dioxide

9420558 Holl This research is focused on developing a better understanding of the atomic scale structure of the silicon/silicon oxide interface and the chemical reactions which occur at this interface. To accomplish these goals, methods are developed for making silicon/silicon oxide interfaces of well-defined structure to serve as model spectroscopic systems. The model interfaces synthesized provide excellent test systems for crHically examining the assumptions and assignments used when interpreting data collected from standard themmal oxide interfaces, an essential component of most microelectronic devices. The interfaces being synthesized are also interesting from the perspective of a priori control of solid structure. Synthetic methods are proposed which allow chemical tuning of the interface and formation of metastable thin films of silicon oxide. Analysis of the stepwise formation of a film using surface science techniques avoids a common problem of precursor to solids chemistry, obtaining meaningful analytical data from the solid formed. %%% The interface between crystalline and amorphous silicon dioxide plays a critical role in microelectronic devices and has been the subject of intense research for over 40 years. Advances in information and communications have been directly coupled with the development of better methods of materials preparation. As silicon oxide film dimensions shrink from about 1000 to 50-100 A, design and understanding of the composition of the interface layer becomes of critical importance. This research is focused on developing a better understanding of the atomic scale structure of the silicon/silicon oxide interface and the chemical reactions which occur at this interface.

这项研究的重点是更好地理解硅/氧化硅界面的原子尺度结构以及发生在该界面上的化学反应。为了实现这些目标，开发了制造结构明确的硅/氧化硅界面的方法，以作为模型光谱系统。合成的模型界面提供了优秀的测试系统，用于严格检查解释从标准热氧化物界面收集的数据时使用的假设和分配，热氧化物界面是大多数微电子设备的基本组成部分。从实体结构的先验控制的角度来看，正在合成的界面也很有趣。提出了可以化学调整界面和形成氧化硅亚稳薄膜的合成方法。利用表面科学技术分析膜的逐步形成，避免了固体化学前体的常见问题，从形成的固体中获得有意义的分析数据。晶体二氧化硅和非晶二氧化硅之间的界面在微电子器件中起着至关重要的作用，40多年来一直是人们深入研究的课题。信息和通信的进步与更好的材料制备方法的发展直接相关。随着氧化硅膜的尺寸从大约1000缩小到50-100，设计和理解界面层的组成变得至关重要。本研究的重点是更好地理解硅/氧化硅界面的原子尺度结构以及发生在该界面上的化学反应。