Structure, Reactivity, and Models of the Silicon/Silicon Dioxide Interface

小行星9420558 这项研究的重点是开发一个更好的理解的原子尺度结构的硅/氧化硅界面和发生在这个界面上的化学反应。 完成 这些目标和方法是为了 制作结构明确的硅/氧化硅界面作为模型光谱系统。 模型界面综合 提供卓越的测试系统 为 严格检查在解释从标准热氧化物界面收集的数据时使用的假设和分配， 一个基本 大多数微电子元件 装置. 从固体结构的先验控制的角度来看，合成的界面也很有趣。 提出了合成方法，允许化学调整的接口和形成的亚稳态薄膜的氧化硅。使用表面科学技术分析膜的逐步形成避免了固体化学前体的常见问题，从形成的固体获得有意义的分析数据。 结晶二氧化硅和非晶二氧化硅之间的界面在微电子器件中起着关键作用，并且40多年来一直是深入研究的主题。 信息和通信方面的进步与更好的材料制备方法的发展直接相关。 随着氧化硅膜尺寸从约1000缩小到50-100 设计和理解界面层的组成变得至关重要。这项研究的重点是开发一个更好的理解的原子尺度结构的硅/氧化硅界面和发生在这个界面上的化学反应。

9420558 Holl This research is focused on developing a better understanding of the atomic scale structure of the silicon/silicon oxide interface and the chemical reactions which occur at this interface. To accomplish these goals, methods are developed for making silicon/silicon oxide interfaces of well-defined structure to serve as model spectroscopic systems. The model interfaces synthesized provide excellent test systems for crHically examining the assumptions and assignments used when interpreting data collected from standard themmal oxide interfaces, an essential component of most microelectronic devices. The interfaces being synthesized are also interesting from the perspective of a priori control of solid structure. Synthetic methods are proposed which allow chemical tuning of the interface and formation of metastable thin films of silicon oxide. Analysis of the stepwise formation of a film using surface science techniques avoids a common problem of precursor to solids chemistry, obtaining meaningful analytical data from the solid formed. %%% The interface between crystalline and amorphous silicon dioxide plays a critical role in microelectronic devices and has been the subject of intense research for over 40 years. Advances in information and communications have been directly coupled with the development of better methods of materials preparation. As silicon oxide film dimensions shrink from about 1000 to 50-100 A, design and understanding of the composition of the interface layer becomes of critical importance. This research is focused on developing a better understanding of the atomic scale structure of the silicon/silicon oxide interface and the chemical reactions which occur at this interface.