The Structure and Reactivity of Silicon/Silicon Oxide Interfaces

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9727166 Banaszak-Holl This project explores the synthesis and study of simple molecules that can provide models of silicon/silicon oxide device interfaces consisting of 1-4 layers of silicon oxide, silicon nitride, or silicon oxynitride on silicon. The models will be used to properly interpret the infrared (IR) and x-ray photoelectron spectroscopy (XPS) of 6-16 Angstroms thick stoichiometric interface regions. Also, physisorbed, well-defined cluster molecules will allow an additional 10-30 Angstroms of silicon oxide to be placed on top of the model interface to make a crude model of stoichiometric silicon dioxide in close proximity to the interface. XPS and surface IR spectra of the stoichiometric model, and the stoichiometric interface model covered by additional oxide, can be obtained over the full range of actual electronic device dimensions. %%% The scaling of device dimensions has resulted in commercial gate oxide thicknesses ranging from 100 Angstroms to as thin as 20-50 Angstroms. These extremely thin oxide films are primarily interfacial in nature, with the stoichiometric silicon dioxide exhibiting different properties from bulk silicon dioxide. The growth and optimization of these nanostructured thin films are crucial for the overall optimization of electronic device performance. ***