A Scanning Tunneling Microscopy Investigation of Spherosiloxane Clusters on Silicon Surfaces

硅表面球硅氧烷簇的扫描隧道显微镜研究

• 批准号: 0093641
• 负责人: Mark Banaszak Holl
• 金额: $ 35万
• 依托单位: Regents of the University of Michigan - Ann Arbor
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2001
• 资助国家: 美国
• 起止时间: 2001-03-15 至 2004-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0093641&HistoricalAwards=false
• 关键词: Scanning; Tunneling; Microscopy; Investigation; Spherosiloxane

This research project focuses on a set of scanning tunneling microscope (STM) experiments employing discrete molecules of hydrogen, silicon, and oxygen (H8Si8O12 and H10Si10O15). The STM-tip/cluster/silicon interaction at the heart of these studies is roughly analogous to a metal-oxide-semiconductor (MOS) capacitor. However, the proposed model has a controllable coupling between the "metal" (STM-tip) and "oxide" (cluster). In these studies, the structure of the insulator can be independently determined to a much greater degree than is possible for the insulator in actual MOS capacitors. The results of these studies will provide a foundation for understanding STM images taken of device interfaces and the basic mechanism of the hydrogen-silicon bond breaking event that leads to device failure. Understanding of structure and failure mechanisms are key for optimizing the next generations of transistors for microelectronic devices. The silicon/silicon oxide interface is a crucial part of the modern transistor. Over the past decade, the thickness of the silicon dioxide insulating layer has shrunk by more than two orders of magnitude and is now approximately10 Angstroms in the smallest research devices. As the thickness of the insulating layer has approached molecular dimensions, the average stoichiometry and physical properties of the silicon oxide undergo important changes that must be understood in order to optimize, or even successfully build, the next generations of silicon-based transistors. Students trained in these areas are likely to compete very well for jobs in various communicatons technology sectors. This research project is jointly supported by the Solid State Chemistry Program of the Division of Materials Research and the Advanced Materials and Processing Program of the Chemistry Division.

该研究项目重点关注一系列使用氢、硅和氧离散分子（H8Si8O12 和 H10Si10O15）的扫描隧道显微镜 (STM) 实验。这些研究核心的 STM 尖端/簇/硅相互作用大致类似于金属氧化物半导体 (MOS) 电容器。然而，所提出的模型在“金属”（STM 尖端）和“氧化物”（簇）之间具有可控耦合。在这些研究中，绝缘体的结构可以在比实际 MOS 电容器中的绝缘体更大的程度上独立确定。这些研究结果将为理解器件界面的 STM 图像以及导致器件失效的氢硅键断裂事件的基本机制提供基础。了解结构和故障机制是优化下一代微电子设备晶体管的关键。硅/氧化硅界面是现代晶体管的关键部分。在过去的十年中，二氧化硅绝缘层的厚度已经缩小了两个数量级以上，现在最小的研究设备中的厚度约为 10 埃。随着绝缘层的厚度接近分子尺寸，氧化硅的平均化学计量和物理性质发生重要变化，为了优化甚至成功构建下一代硅基晶体管，必须了解这些变化。 在这些领域接受过培训的学生很可能在各个通信技术领域的工作中表现出色。 该研究项目得到材料研究部固体化学项目和化学部先进材料与加工项目联合资助。