Semiconductor Physics and Photonics

半导体物理与光子学

• 批准号: 9421517
• 负责人: Hyatt Gibbs
• 金额: $ 28.5万
• 依托单位: University of Arizona
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-10-01 至 1999-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9421517&HistoricalAwards=false
• 关键词: Semiconductor; Physics; Photonics

9421517 Gibbs This is a renewal proposal for Lightwave Technology research on semiconductor physics and photonics. The approach is to grow III-V semiconductor heterostructures using a Riber MBE machine, where appropriate to fabricate them into devices by photolithography and reactive ion etching, and to study their optical properties by linear and nonlinear optical spectroscopies including femtosecond dynamics and high magnetic fields. The proposal concentrates on topics in four areas: vertical-cavity surface-emitting lasers (VCSEL's); nonlinear optical materials, nonlinear optical switches; and Er-doped semiconductors. The first three areas are extensions of research under the current grant, whereas the fourth is a new direction. ***

9421517吉布斯这是一个光波技术研究半导体物理和光子学的更新建议。 该方法是使用Riber MBE机器生长III-V族半导体异质结构，在适当的情况下通过光刻和反应离子蚀刻将其制造成器件，并通过线性和非线性光学光谱（包括飞秒动力学和高磁场）研究其光学特性。 该提案集中在四个领域的主题：垂直腔表面发射激光器（VCSEL）;非线性光学材料、非线性光学开关;和掺铒半导体。 前三个领域是现有补助金下研究的扩展，而第四个是一个新方向。 ***