TOWARD QUANTUM SEMICONDUCTOR MICROCAVITIES

这项提议是对ECS-9421517“半导体物理和光子学”奖的续展。PI在这一开创性工作中发挥了重要作用，并在半导体微腔中的简正模耦合方面取得了重要发现。这一更新方案旨在将先前的成果扩展到微腔的量子极限，在微腔中存在强耦合，可以产生单光子吸收的变化。到目前为止，所有的半导体微腔都工作在需要105个光子的半经典区域。虽然在这样的系统中可以获得有趣的光学非线性，但还没有观察到类似于原子腔量子电动力学的量子效应。在这个提议中，PI建议制造和分析直径约100 nm的横向受限微腔，这将使半导体系统中的量子区域得以实现。

This proposal is a renewal for the award ECS-9421517, "Semiconductor Physics and Photonics". The PI has played a significant role in the pioneering work and made important discoveries regarding the normal-mode coupling in semiconductor microcavities. This renewal proposal is aimed to extend the previous accomplishment toward quantum limit of the micro-cavity where a strong coupling exists that can produce a change in the absorption by a single photon. All semiconductor microcavities to date have operated in the semi-classical regime where 105 photons are required. Although interesting optical non-linearity can be obtained in such a system, the quantum effects analogous to atomic cavity quantum electrodynamics has not been observed. In this proposal the PI suggests to fabricate and analyze transversely confined microcavities with ~100 nm diameters that will enable the quantum regime to be achieved in the semiconductor system.