Interface Physics

小行星9501859 一 光致发光、水平反交叉、光学检测磁共振（ODMR）和拉曼散射技术的组合将用于提供非侵入性研究 的 半导体接口 技术上重要的异质结构。这些研究将在砷化镓/砷化铝的II型超晶格上进行，作为生长参数（生长中断时间、衬底温度、生长速率等）的函数。和生长技术（常规分子束外延、迁移增强外延和交替分子束外延）。结果将阐明与电子结构有关的问题 在 砷化镓-砷化铝界面。 界面在一个至关重要的，但往往缺乏量化的 在许多电子和光电子设备中的作用，这项工作，与科学家合作完成从Ioffe物理技术研究所，将提供新的实验信息和理论解释。结果 将对光学产生重大影响 和光电技术。 %%% 界面在许多电子设备中起着重要的作用，但往往难以量化，这项研究将提供新的实验信息和理论解释。 该项目将利用光致发光、水平反交叉、光学检测磁共振和共振拉曼散射等非侵入性技术的独特组合，研究砷化镓/砷化铝半导体界面的光发射过程随生长参数和生长技术的变化。 其结果将对光学和光电技术产生重大影响。 ****

9501859 Gibbs A combination of photoluminscence, level anticrossing, Optically Detected Magnetic Resonance (ODMR), and Raman scattering techniques will be used to provide a non-invasive study of semiconductor interfaces in technologically important heterostructures. The studies will be conducted on type II superlattices of gallium-arsenide/aluminium-arsenide as a function of growth parameters (growth interruption times, substrate temperature, growth rates, etc.) and growth techniques (conventional molecular-beam-epitaxy, migration enhanced epitaxy, and alternate molecular-beam-epitaxy). The results will elucidate the problem related to the electronic structures at gallium-arsenide-aluminium-arsenide interfaces. Interfaces play an essential and often poorly quantified role in many electronic and optoelectronic devices, this work, done in collaboration with scientists from the Ioffe Physico-Technical Institute, will provide new experimental information and theoretical interpretation. The results will have significant impact on optical and optoelectronic technologies. %%% Interfaces play an essential and often poorly quantified role in many electronic devices, this research will provide new experimental information and theoretical interpretation. The project will make use of unique combinations of non invasive techniques such as photoluminescence, level anti crossing, optically detected magnetic resonance and resonant Raman scattering, to study the process of ligh emission at gallium-arsenide/aluminium-arsenide semiconductor interfaces as a function of growth parameters and growth techniques. The results will have significant impact on optical and optoelectronic technologies. ****