Interface Physics

界面物理

• 批准号: 9501859
• 负责人: Hyatt Gibbs
• 金额: $ 27.02万
• 依托单位: University of Arizona
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-08-01 至 1998-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9501859&HistoricalAwards=false
• 关键词: Interface; Physics

9501859 Gibbs A combination of photoluminscence, level anticrossing, Optically Detected Magnetic Resonance (ODMR), and Raman scattering techniques will be used to provide a non-invasive study of semiconductor interfaces in technologically important heterostructures. The studies will be conducted on type II superlattices of gallium-arsenide/aluminium-arsenide as a function of growth parameters (growth interruption times, substrate temperature, growth rates, etc.) and growth techniques (conventional molecular-beam-epitaxy, migration enhanced epitaxy, and alternate molecular-beam-epitaxy). The results will elucidate the problem related to the electronic structures at gallium-arsenide-aluminium-arsenide interfaces. Interfaces play an essential and often poorly quantified role in many electronic and optoelectronic devices, this work, done in collaboration with scientists from the Ioffe Physico-Technical Institute, will provide new experimental information and theoretical interpretation. The results will have significant impact on optical and optoelectronic technologies. %%% Interfaces play an essential and often poorly quantified role in many electronic devices, this research will provide new experimental information and theoretical interpretation. The project will make use of unique combinations of non invasive techniques such as photoluminescence, level anti crossing, optically detected magnetic resonance and resonant Raman scattering, to study the process of ligh emission at gallium-arsenide/aluminium-arsenide semiconductor interfaces as a function of growth parameters and growth techniques. The results will have significant impact on optical and optoelectronic technologies. ****

结合光致发光、水平反交叉、光学检测磁共振（ODMR）和拉曼散射技术，将提供技术上重要异质结构半导体界面的非侵入性研究。研究将对砷化镓/砷化铝的II型超晶格进行研究，并将其作为生长参数（生长中断时间、衬底温度、生长速率等）和生长技术（传统的分子束外延、迁移增强外延和交替分子束外延）的函数。这些结果将阐明与砷化镓-砷化铝界面的电子结构有关的问题。界面在许多电子和光电子设备中起着至关重要的作用，但往往难以量化，这项工作是与Ioffe物理技术研究所的科学家合作完成的，将提供新的实验信息和理论解释。这一结果将对光学和光电子技术产生重大影响。在许多电子设备中，界面起着至关重要的作用，但往往难以量化，本研究将提供新的实验信息和理论解释。本项目将利用光致发光、能级防交叉、光学探测磁共振和共振拉曼散射等非侵入性技术的独特组合，研究砷化镓/砷化铝半导体界面的光发射过程与生长参数和生长技术的关系。这一结果将对光学和光电子技术产生重大影响。＊＊＊＊