Interface Physics

9501859吉布斯将结合光致发光、能级防腐、光学检测磁共振和拉曼散射技术，对具有重要技术意义的异质结构中的半导体界面进行非侵入性研究。这些研究将在第二类砷化镓/砷化铝超晶格上进行，作为生长参数(生长中断时间、衬底温度、生长速率等)的函数。以及生长技术(传统的分子束外延、迁移增强外延和交替分子束外延)。这一结果将阐明与镓-砷化物-铝-砷化物界面电子结构有关的问题。界面在许多电子和光电子器件中扮演着重要且往往难以量化的角色，这项与IOFE物理技术研究所的科学家合作完成的工作将提供新的实验信息和理论解释。这一结果将对光学和光电子技术产生重大影响。接口在许多电子器件中扮演着重要的角色，但往往缺乏量化，这项研究将提供新的实验信息和理论解释。该项目将利用光致发光、能级反交叉、光学检测磁共振和共振拉曼散射等非侵入性技术的独特组合，研究镓-砷化物/铝-砷化物半导体界面上的光发射过程，作为生长参数和生长技术的函数。这一结果将对光学和光电子技术产生重大影响。****

9501859 Gibbs A combination of photoluminscence, level anticrossing, Optically Detected Magnetic Resonance (ODMR), and Raman scattering techniques will be used to provide a non-invasive study of semiconductor interfaces in technologically important heterostructures. The studies will be conducted on type II superlattices of gallium-arsenide/aluminium-arsenide as a function of growth parameters (growth interruption times, substrate temperature, growth rates, etc.) and growth techniques (conventional molecular-beam-epitaxy, migration enhanced epitaxy, and alternate molecular-beam-epitaxy). The results will elucidate the problem related to the electronic structures at gallium-arsenide-aluminium-arsenide interfaces. Interfaces play an essential and often poorly quantified role in many electronic and optoelectronic devices, this work, done in collaboration with scientists from the Ioffe Physico-Technical Institute, will provide new experimental information and theoretical interpretation. The results will have significant impact on optical and optoelectronic technologies. %%% Interfaces play an essential and often poorly quantified role in many electronic devices, this research will provide new experimental information and theoretical interpretation. The project will make use of unique combinations of non invasive techniques such as photoluminescence, level anti crossing, optically detected magnetic resonance and resonant Raman scattering, to study the process of ligh emission at gallium-arsenide/aluminium-arsenide semiconductor interfaces as a function of growth parameters and growth techniques. The results will have significant impact on optical and optoelectronic technologies. ****