NSF/ONR: Advanced Processing, Characterization and Properties of Epitaxial Multilayer Superconductor Heterostructures and Devices

NSF/ONR:外延多层超导体异质结构和器件的先进加工、表征和性能

基本信息

  • 批准号:
    9421718
  • 负责人:
  • 金额:
    $ 9万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Continuing Grant
  • 财政年份:
    1995
  • 资助国家:
    美国
  • 起止时间:
    1995-08-15 至 1998-07-31
  • 项目状态:
    已结题

项目摘要

9421718 Narayan Understanding of the structure and properties of interfaces between high-temperature superconductors, metals and dielectrics holds key to the properties of thin film epitaxial structures. The structure and chemical composition of interfaces determines the nature of epitaxial growth and defects in thin films which directly affect transport properties and device characteristics. The objective of this proposal is: In-situ processing of multilayer heterostructures needed for advanced superconductor devices. The primary focus will be on yittria, barium oxide, and copper oxide superconducting materials systems. Thin film multilayer heterostructures will be processed by pulsed laser deposition using a multitarget holder where up to five different films can be grown in a single chamber. By replacing one of the targets with a laser mirror it is possible to channel the laser energy on the substrate and achieve in-situ atomic level cleaning. Modeling of stresses and strains will be carried out to understand the nature of epitaxial growth and defect content in thin films. These results will be correlated with atomic structure and chemical composition of interfaces and nature of defects in thin films. Epitaxial quality and defect content of thin films will be optimized to achieve highest theoretical superconducting temperature Tc (about 94 Kelvin) and critical current density (Jc greater than 5.0 million amps. per square cm at 77 Kelvin) for high performance devices. The optimized thin films will be used to fabricate a few high-performance bolometers (high responsivity or high speed). Superconducting materials offer an attractive energy conserving way of transmitting electricity with very low losses. However, in order to capitalize on this superconducting property, the material has to be super cooled. Further, for practical applications these superconductors have to be built into devices. In order to maximize the application, one needs to operate these devices with m inimum degree of cooling. By understanding the process of multilayer superconducting devices, it is anticipated that a broader application of this technology may become possible into new electronic devices. ***
[421718] Narayan高温超导体、金属和电介质之间的界面结构和特性的理解是薄膜外延结构特性的关键。界面的结构和化学成分决定了薄膜外延生长的性质和缺陷,直接影响传输性能和器件特性。本提案的目的是:先进超导体器件所需的多层异质结构的原位加工。主要的焦点将放在钇、氧化钡和氧化铜超导材料系统上。薄膜多层异质结构将通过脉冲激光沉积处理,使用多目标支架,其中多达五种不同的薄膜可以在一个单独的腔室中生长。通过用激光反射镜取代其中一个目标,可以在衬底上引导激光能量并实现原位原子级清洁。对应力和应变进行建模,以了解薄膜外延生长和缺陷含量的性质。这些结果将与薄膜中界面的原子结构和化学组成以及缺陷的性质有关。薄膜的外延质量和缺陷含量将得到优化,以达到最高理论超导温度Tc(约94开尔文)和临界电流密度Jc大于500万安培。每平方厘米77开尔文)的高性能器件。优化后的薄膜将用于制造一些高性能(高响应性或高速度)的测热计。超导材料提供了一种极具吸引力的低损耗节能输电方式。然而,为了充分利用这种超导特性,材料必须经过超冷处理。此外,为了实际应用,这些超导体必须被内置到设备中。为了使应用最大化,人们需要在最低冷却程度下操作这些设备。通过对多层超导器件制备过程的了解,预计该技术在新型电子器件中的广泛应用将成为可能。* * *

项目成果

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Jagdish Narayan其他文献

Mechanical properties of nanocrystalline and epitaxial TiN films on (100) silicon
(100) 硅上纳米晶和外延 TiN 薄膜的机械性能
  • DOI:
  • 发表时间:
    2001
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Haiyan Wang;A. Sharma;A. Kvit;Q. Wei;Xinghang Zhang;Carl C. Koch;Jagdish Narayan
  • 通讯作者:
    Jagdish Narayan
The pulsed-laser deposition of superconducting thin films
  • DOI:
    10.1007/bf03220157
  • 发表时间:
    1991-03-01
  • 期刊:
  • 影响因子:
    2.300
  • 作者:
    Rajiv K. Singh;Jagdish Narayan
  • 通讯作者:
    Jagdish Narayan
Direct Laser Writing of Nucleation Sites for Patterned Diamond Growth
  • DOI:
    10.1007/s11664-025-11847-1
  • 发表时间:
    2025-03-11
  • 期刊:
  • 影响因子:
    2.500
  • 作者:
    Sumeer Khanna;Jagdish Narayan;Roger Narayan
  • 通讯作者:
    Roger Narayan
Recent Progress in Cubic Boron Nitride (c-BN) Fabrication by Pulsed Laser Annealing for Optoelectronic Applications
通过脉冲激光退火制造光电应用立方氮化硼 (c-BN) 的最新进展
  • DOI:
  • 发表时间:
    2024
  • 期刊:
  • 影响因子:
    2.1
  • 作者:
    Ariful Haque;Saif Taqy;Jagdish Narayan
  • 通讯作者:
    Jagdish Narayan
Ultrafast pulsed laser irradiation on amorphous carbon and singlecrystalline diamond
非晶碳和单晶金刚石的超快脉冲激光辐照
  • DOI:
  • 发表时间:
    2019
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Abdelrahman Zkria;Tsuyoshi Yoshitake;Eslam Abubakr;Jagdish Narayan
  • 通讯作者:
    Jagdish Narayan

Jagdish Narayan的其他文献

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{{ truncateString('Jagdish Narayan', 18)}}的其他基金

Designing Ultra-hard Coatings of Q-carbon and Diamond Related Materials
Q-碳和金刚石相关材料的超硬涂层设计
  • 批准号:
    2016256
  • 财政年份:
    2020
  • 资助金额:
    $ 9万
  • 项目类别:
    Standard Grant
Direct Conversion of Carbon into Q-carbon and Diamond and Fabrication of Novel Nanostructures
碳直接转化为Q-碳和金刚石以及新型纳米结构的制造
  • 批准号:
    1735695
  • 财政年份:
    2017
  • 资助金额:
    $ 9万
  • 项目类别:
    Standard Grant
Direct Conversion of Carbon into Diamond and Useful Micro and Nanostructures
碳直接转化为金刚石和有用的微米和纳米结构
  • 批准号:
    1560838
  • 财政年份:
    2016
  • 资助金额:
    $ 9万
  • 项目类别:
    Standard Grant
GOALI: Novel Epitaxial Vanadium Oxide Thin Film Heterostructures Integrated with Si(100)
GOALI:与 Si(100) 集成的新型外延氧化钒薄膜异质结构
  • 批准号:
    1304607
  • 财政年份:
    2013
  • 资助金额:
    $ 9万
  • 项目类别:
    Continuing Grant
High Efficiency Nanostructured Light Emitting Diodes on Nonpolar Substrates
非极性基板上的高效纳米结构发光二极管
  • 批准号:
    0921517
  • 财政年份:
    2009
  • 资助金额:
    $ 9万
  • 项目类别:
    Standard Grant
GOALI: Ultrafast Phase Transition and Critical Issues in Structure-Property Correlations of Vanadium Oxide
GOALI:氧化钒结构-性能相关性的超快相变和关键问题
  • 批准号:
    0803663
  • 财政年份:
    2008
  • 资助金额:
    $ 9万
  • 项目类别:
    Continuing Grant
High Efficiency Organic Solar Cells with Novel Transparent Electrodes
具有新型透明电极的高效有机太阳能电池
  • 批准号:
    0653722
  • 财政年份:
    2007
  • 资助金额:
    $ 9万
  • 项目类别:
    Continuing Grant
Field Emission Atomic Resolution Electron Microscope
场发射原子分辨率电子显微镜
  • 批准号:
    9724279
  • 财政年份:
    1997
  • 资助金额:
    $ 9万
  • 项目类别:
    Standard Grant
US-India Cooperative Research: Laser and Plasma Deposition and Adhesion of Diamond and Diamondlike Films, Award in Indian and US Currencies
美印合作研究:金刚石和类金刚石薄膜的激光和等离子沉积和粘合,以印度和美国货币颁发的奖项
  • 批准号:
    9605181
  • 财政年份:
    1997
  • 资助金额:
    $ 9万
  • 项目类别:
    Standard Grant
Novel Ohmic Contacts and Device Structures Using Cu-Ge Alloys on GaAs and Related Compounds
在 GaAs 和相关化合物上使用 Cu-Ge 合金的新型欧姆接触和器件结构
  • 批准号:
    9525993
  • 财政年份:
    1996
  • 资助金额:
    $ 9万
  • 项目类别:
    Continuing Grant

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