Novel Ohmic Contacts and Device Structures Using Cu-Ge Alloys on GaAs and Related Compounds

在 GaAs 和相关化合物上使用 Cu-Ge 合金的新型欧姆接触和器件结构

• 批准号: 9525993
• 负责人: Jagdish Narayan
• 金额: $ 22万
• 依托单位: North Carolina State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1996
• 资助国家: 美国
• 起止时间: 1996-07-01 至 2000-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9525993&HistoricalAwards=false
• 关键词: Novel; Ohmic; Contacts; Device; Structures

9525993 Narayan Formation of low resistivity ohmic contacts that exhibit high thermal stability, and planar interfaces has represented a major impediment to III-V device technology. The primary thrust of this proposal is three-fold: (1) structure and intrinsic electrical properties of novel Cu-Ge alloys as a function of Ge concentration and ordering; (2) formation of low resistivity ohmic contacts and correlations with interface structure and chemical composition, substrate doping and anneal temperature; and (3) optimization of parameters to obtain low-resistivity ohmic contacts and fabrication of test device structures. We propose the formation of novel ohmic contacts with record low contact resistivity and high temperature stability based on Cu-Ge alloys to n- and p- type GaAs and related III-V compounds. The contact scheme will be developed and optimized to fabricate advanced semiconductor test devices which are expected to exhibit superior device properties and performance. ***

表现出高热稳定性的低电阻率欧姆接触和平面界面的形成代表了III-V器件技术的主要障碍。 本论文的主要研究内容包括三个方面：（1）新型Cu-Ge合金的结构和本征电学性能与Ge浓度和有序度的关系：（2）低电阻欧姆接触的形成与界面结构、化学成分、衬底掺杂和退火温度的关系;以及（3）优化参数以获得低电阻率欧姆接触和测试器件结构的制造。 我们提出了新的欧姆接触的形成与创纪录的低接触电阻率和高温稳定性的基础上的Cu-Ge合金的n型和p型GaAs和相关的III-V族化合物。 将开发和优化接触方案，以制造先进的半导体测试器件，这些器件有望表现出上级器件特性和性能。 ***