Novel Ohmic Contacts and Device Structures Using Cu-Ge Alloys on GaAs and Related Compounds

9525993表现出高热稳定性的低电阻率欧姆接触的纳拉延地层和平面界面是III-V器件技术的主要障碍。这一建议的主要目的有三个方面：(1)新型铜-锗合金的结构和本征电学性质随Ge浓度和有序化的变化；(2)低电阻率欧姆接触的形成以及与界面结构和化学成分、衬底掺杂和退火温度的关系；(3)优化参数以获得低电阻率欧姆接触和测试器件结构的制造。我们提出了基于铜-锗合金与n型和p型GaAs及相关的III-V化合物形成具有低接触电阻率和高温稳定性的新型欧姆接触。接触方案将被开发和优化，以制造先进的半导体测试设备，预计将显示出优异的设备性能和性能。***

9525993 Narayan Formation of low resistivity ohmic contacts that exhibit high thermal stability, and planar interfaces has represented a major impediment to III-V device technology. The primary thrust of this proposal is three-fold: (1) structure and intrinsic electrical properties of novel Cu-Ge alloys as a function of Ge concentration and ordering; (2) formation of low resistivity ohmic contacts and correlations with interface structure and chemical composition, substrate doping and anneal temperature; and (3) optimization of parameters to obtain low-resistivity ohmic contacts and fabrication of test device structures. We propose the formation of novel ohmic contacts with record low contact resistivity and high temperature stability based on Cu-Ge alloys to n- and p- type GaAs and related III-V compounds. The contact scheme will be developed and optimized to fabricate advanced semiconductor test devices which are expected to exhibit superior device properties and performance. ***