High Efficiency Nanostructured Light Emitting Diodes on Nonpolar Substrates
非极性基板上的高效纳米结构发光二极管
基本信息
- 批准号:0921517
- 负责人:
- 金额:$ 38.25万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2009
- 资助国家:美国
- 起止时间:2009-09-15 至 2014-08-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The objective of this research is to enhance the quantum efficiencies (IQE) of GaN based light emitting diodes (LEDs) to be used for solid state lighting closer to 100%. The approach is to reduce harmful defects in device layers and enhance photon generation and create better Ohmic contacts to enhance photon extraction. The proposed research addresses four critical scientific issues in enhancing IQE (LEDs). These critical thrusts include: (1) thin film epitaxy across the misfit scale on nonpolar (r-plane) sapphire; (2) management of stresses and charge through control of defects and interfaces; (3) nanostructured thickness variation or quantum confinement of active carriers, and (4) formation of low-resistivity transparent Ohmic contacts. The GaN layers on sapphire have planar misfit ranging from 1.19 to 16.08%, therefore, epitaxial layers will be grown by domain matching epitaxy where integral multiples of planes match across the film-substrate interface. The misfit strain can be relaxed within two monolayers and the misfit dislocations confined within this layer to reduce the density of threading dislocations. Low-resistivity contacts will be created using novel Ga- and Al-doped ZnO with NiO or MoOx interlayer which increases the work function to reduce Schottky barrier. There is a tremendous societal benefit from this project as the solid-state lighting (SSL) offers an entirely new lighting paradigm, compared to existing incandescent lighting. The SSL efficiency can approach 400 lm/W, compared to ~ 17 lm/W for incandescent bulb and ~ 50 lm/W for fluorescent bulb with power consumption in SSL an order of magnitude lower than incandescent lighting and life expectancy of over forty years. The proposed research has a strong educational component in terms of teaching and training of graduate students.
本研究的目的是提高GaN基发光二极管(LED)的量子效率(IQE),使其用于固态照明接近100%。该方法是减少器件层中的有害缺陷,增强光子产生,并创建更好的欧姆接触以增强光子提取。拟议的研究解决了提高IQE(LED)的四个关键科学问题。这些关键的推动力包括:(1)在非极性(r-平面)蓝宝石上的失配尺度上的薄膜外延;(2)通过控制缺陷和界面来管理应力和电荷;(3)有源载流子的纳米结构厚度变化或量子限制,以及(4)形成低电阻率透明欧姆接触。蓝宝石上的GaN层具有范围从1.19至16.08%的平面失配,因此,外延层将通过畴匹配外延生长,其中整数倍的平面在膜-衬底界面上匹配。失配应变可以在两个单层内弛豫,并且失配位错被限制在该层内以降低穿透位错的密度。低电阻率接触将使用新的Ga和Al掺杂的ZnO与NiO或MoOx中间层,这增加了功函数,以减少肖特基势垒。该项目具有巨大的社会效益,因为与现有的白炽灯照明相比,固态照明(SSL)提供了一种全新的照明模式。SSL效率可以接近400 lm/W,相比之下,白炽灯泡的效率约为17 lm/W,荧光灯泡的效率约为50 lm/W,SSL中的功耗比白炽灯照明低一个数量级,预期寿命超过四十年。拟议的研究有很强的教育成分,在教学和研究生的培训。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Jagdish Narayan其他文献
Mechanical properties of nanocrystalline and epitaxial TiN films on (100) silicon
(100) 硅上纳米晶和外延 TiN 薄膜的机械性能
- DOI:
- 发表时间:
2001 - 期刊:
- 影响因子:0
- 作者:
Haiyan Wang;A. Sharma;A. Kvit;Q. Wei;Xinghang Zhang;Carl C. Koch;Jagdish Narayan - 通讯作者:
Jagdish Narayan
Direct Laser Writing of Nucleation Sites for Patterned Diamond Growth
- DOI:
10.1007/s11664-025-11847-1 - 发表时间:
2025-03-11 - 期刊:
- 影响因子:2.500
- 作者:
Sumeer Khanna;Jagdish Narayan;Roger Narayan - 通讯作者:
Roger Narayan
The pulsed-laser deposition of superconducting thin films
- DOI:
10.1007/bf03220157 - 发表时间:
1991-03-01 - 期刊:
- 影响因子:2.300
- 作者:
Rajiv K. Singh;Jagdish Narayan - 通讯作者:
Jagdish Narayan
Recent Progress in Cubic Boron Nitride (c-BN) Fabrication by Pulsed Laser Annealing for Optoelectronic Applications
通过脉冲激光退火制造光电应用立方氮化硼 (c-BN) 的最新进展
- DOI:
- 发表时间:
2024 - 期刊:
- 影响因子:2.1
- 作者:
Ariful Haque;Saif Taqy;Jagdish Narayan - 通讯作者:
Jagdish Narayan
Ultrafast pulsed laser irradiation on amorphous carbon and singlecrystalline diamond
非晶碳和单晶金刚石的超快脉冲激光辐照
- DOI:
- 发表时间:
2019 - 期刊:
- 影响因子:0
- 作者:
Abdelrahman Zkria;Tsuyoshi Yoshitake;Eslam Abubakr;Jagdish Narayan - 通讯作者:
Jagdish Narayan
Jagdish Narayan的其他文献
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{{ truncateString('Jagdish Narayan', 18)}}的其他基金
Designing Ultra-hard Coatings of Q-carbon and Diamond Related Materials
Q-碳和金刚石相关材料的超硬涂层设计
- 批准号:
2016256 - 财政年份:2020
- 资助金额:
$ 38.25万 - 项目类别:
Standard Grant
Direct Conversion of Carbon into Q-carbon and Diamond and Fabrication of Novel Nanostructures
碳直接转化为Q-碳和金刚石以及新型纳米结构的制造
- 批准号:
1735695 - 财政年份:2017
- 资助金额:
$ 38.25万 - 项目类别:
Standard Grant
Direct Conversion of Carbon into Diamond and Useful Micro and Nanostructures
碳直接转化为金刚石和有用的微米和纳米结构
- 批准号:
1560838 - 财政年份:2016
- 资助金额:
$ 38.25万 - 项目类别:
Standard Grant
GOALI: Novel Epitaxial Vanadium Oxide Thin Film Heterostructures Integrated with Si(100)
GOALI:与 Si(100) 集成的新型外延氧化钒薄膜异质结构
- 批准号:
1304607 - 财政年份:2013
- 资助金额:
$ 38.25万 - 项目类别:
Continuing Grant
GOALI: Ultrafast Phase Transition and Critical Issues in Structure-Property Correlations of Vanadium Oxide
GOALI:氧化钒结构-性能相关性的超快相变和关键问题
- 批准号:
0803663 - 财政年份:2008
- 资助金额:
$ 38.25万 - 项目类别:
Continuing Grant
High Efficiency Organic Solar Cells with Novel Transparent Electrodes
具有新型透明电极的高效有机太阳能电池
- 批准号:
0653722 - 财政年份:2007
- 资助金额:
$ 38.25万 - 项目类别:
Continuing Grant
Field Emission Atomic Resolution Electron Microscope
场发射原子分辨率电子显微镜
- 批准号:
9724279 - 财政年份:1997
- 资助金额:
$ 38.25万 - 项目类别:
Standard Grant
US-India Cooperative Research: Laser and Plasma Deposition and Adhesion of Diamond and Diamondlike Films, Award in Indian and US Currencies
美印合作研究:金刚石和类金刚石薄膜的激光和等离子沉积和粘合,以印度和美国货币颁发的奖项
- 批准号:
9605181 - 财政年份:1997
- 资助金额:
$ 38.25万 - 项目类别:
Standard Grant
Novel Ohmic Contacts and Device Structures Using Cu-Ge Alloys on GaAs and Related Compounds
在 GaAs 和相关化合物上使用 Cu-Ge 合金的新型欧姆接触和器件结构
- 批准号:
9525993 - 财政年份:1996
- 资助金额:
$ 38.25万 - 项目类别:
Continuing Grant
NSF/ONR: Advanced Processing, Characterization and Properties of Epitaxial Multilayer Superconductor Heterostructures and Devices
NSF/ONR:外延多层超导体异质结构和器件的先进加工、表征和性能
- 批准号:
9421718 - 财政年份:1995
- 资助金额:
$ 38.25万 - 项目类别:
Continuing Grant
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