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Scaleup of the 'Electron Jet' Jet Vapor Deposition Source

Scaleup of the 'Electron Jet' Jet Vapor Deposition Source
“Electron Jet”喷射气相沉积源的放大
批准号:
9460604
负责人:
Bret Halpern
金额:
$6.5万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1995
资助国家:
美国
项目状态:
已结题
起止时间:
1995-02-01 至 1995-11-30

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中文摘要
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英文摘要
This Small Business Innovation Research Phase I project aims to lay the foundation for scaleup and commercial application of a powerful new thin film Jet Vapor Deposition (JVD) source, the `electron jet, or e-jet`, recently invented at Jet Process Corporation (JPC). JVD is gaining increased recognition for its use of `sonic jets in low vacuum` to deposit high quality films of metals, semiconductors, oxides, nitrides, and organics at high rate. The e-jet has the potential to combine very high rates of deposition with very precise in-situ control of the properties of the growing film. This is done by high flux ion bombardment with low energy ions, a capability made possible by the unusually high ion density of the e-jet's plasma. JPC is collaborating with several large companies on applications where the e-jet offers the only promising, commercially viable solution. In order to realize the e-jet's promise of ultra-high throughput and fine property control they propose to investigate and optimize e-jet performance factors critical to film quality: cluster formation and growth, plasma ion density, and ion impact energy on biased substrates. In Phase I JPC will use mass spectrometry, Langmuir probe methods, and retarding potential techniques to address those issues. Success in Phase I will result in a JVD source capable of extremely high throughputs, control of film quality, pollution free operation, and application to many materials; in Phase II a tenfold faster e-jet will be constructed for commercial applications. Enhancement of e-jet performance will lead to immediate economic benefits for JPC and its contractors in a wide range of applications.
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SBIR PHASE II: Development and Scaleup of the "Electron Jet" Jet Vapor Deposition Source
  • 批准号:
    9703963
  • 项目类别:
    Standard Grant
  • 资助金额:
    $28.78万
  • 财政年份:
    1997
  • 负责人:
    Bret Halpern
  • 依托单位:
An Electron Pumped, Thin Film, Solid Host Dye Laser
  • 批准号:
    9461215
  • 项目类别:
    Standard Grant
  • 资助金额:
    $6.5万
  • 财政年份:
    1995
  • 负责人:
    Bret Halpern
  • 依托单位:
Photobleachable Host-Guest Thin for Integrated Optical Devices
  • 批准号:
    9303207
  • 项目类别:
    Standard Grant
  • 资助金额:
    $30.0万
  • 财政年份:
    1993
  • 负责人:
    Bret Halpern
  • 依托单位:
Photobleachable Host-Guest Thin Films for Optical Waveguides
  • 批准号:
    9160294
  • 项目类别:
    Standard Grant
  • 资助金额:
    $5.0万
  • 财政年份:
    1992
  • 负责人:
    Bret Halpern
  • 依托单位:
国内基金
海外基金
Muon--electron转换过程的实验研究