Scaleup of the 'Electron Jet' Jet Vapor Deposition Source
Scaleup of the 'Electron Jet' Jet Vapor Deposition Source
批准号:
9460604
负责人:
Bret Halpern
金额:
$6.5万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1995
资助国家:
美国
项目状态:
已结题
起止时间:
1995-02-01 至 1995-11-30
中文摘要
这个小型企业创新研究第一阶段项目旨在为Jet Process Corporation(JPC)最近发明的一种强大的新型薄膜喷射气相沉积(JVD)源--电子喷射或e-Jet--的扩大和商业应用奠定基础。由于JVD使用“低真空音速喷射”来高速沉积金属、半导体、氧化物、氮化物和有机物的高质量薄膜,因此获得了越来越多的认可。E-JET有可能将极高的沉积速率与对生长薄膜的特性进行非常精确的就地控制相结合。这是通过用低能离子进行高通量离子轰击来实现的,这一能力是由电子喷气式飞机等离子体异常高的离子密度实现的。JPC正在与几家大公司合作,在这些应用中,e-Jet提供了唯一有前途的、商业上可行的解决方案。为了实现e-JET超高吞吐量和精细性能控制的前景,他们建议研究和优化对薄膜质量至关重要的e-JET性能因素:团簇的形成和生长、等离子体离子密度以及偏置衬底上的离子撞击能量。在第一阶段,JPC将使用质谱仪、朗缪尔探头方法和延缓潜在技术来解决这些问题。第一阶段的成功将导致JVD源能够极高的产量、薄膜质量的控制、无污染的操作以及对多种材料的应用;在第二阶段,将为商业应用建造速度快十倍的电子喷射器。电子飞机性能的提高将为少年警讯及其承包商在广泛的应用中带来立竿见影的经济效益。
英文摘要
This Small Business Innovation Research Phase I project aims to lay the foundation for scaleup and commercial application of a powerful new thin film Jet Vapor Deposition (JVD) source, the `electron jet, or e-jet`, recently invented at Jet Process Corporation (JPC). JVD is gaining increased recognition for its use of `sonic jets in low vacuum` to deposit high quality films of metals, semiconductors, oxides, nitrides, and organics at high rate. The e-jet has the potential to combine very high rates of deposition with very precise in-situ control of the properties of the growing film. This is done by high flux ion bombardment with low energy ions, a capability made possible by the unusually high ion density of the e-jet's plasma. JPC is collaborating with several large companies on applications where the e-jet offers the only promising, commercially viable solution. In order to realize the e-jet's promise of ultra-high throughput and fine property control they propose to investigate and optimize e-jet performance factors critical to film quality: cluster formation and growth, plasma ion density, and ion impact energy on biased substrates. In Phase I JPC will use mass spectrometry, Langmuir probe methods, and retarding potential techniques to address those issues. Success in Phase I will result in a JVD source capable of extremely high throughputs, control of film quality, pollution free operation, and application to many materials; in Phase II a tenfold faster e-jet will be constructed for commercial applications. Enhancement of e-jet performance will lead to immediate economic benefits for JPC and its contractors in a wide range of applications.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
SBIR PHASE II: Development and Scaleup of the "Electron Jet" Jet Vapor Deposition Source
-
批准号:9703963
-
项目类别:Standard Grant
-
资助金额:$28.78万
-
财政年份:1997
-
负责人:Bret Halpern
-
依托单位:
An Electron Pumped, Thin Film, Solid Host Dye Laser
-
批准号:9461215
-
项目类别:Standard Grant
-
资助金额:$6.5万
-
财政年份:1995
-
负责人:Bret Halpern
-
依托单位:
Photobleachable Host-Guest Thin for Integrated Optical Devices
-
批准号:9303207
-
项目类别:Standard Grant
-
资助金额:$30.0万
-
财政年份:1993
-
负责人:Bret Halpern
-
依托单位:
Photobleachable Host-Guest Thin Films for Optical Waveguides
-
批准号:9160294
-
项目类别:Standard Grant
-
资助金额:$5.0万
-
财政年份:1992
-
负责人:Bret Halpern
-
依托单位:
Energy Transfer from Chemically Activated Molecules on Surfaces
-
批准号:8511319
-
项目类别:Standard Grant
-
资助金额:$8.9万
-
财政年份:1986
-
负责人:Bret Halpern
-
依托单位:
Detection of Vibrationally Excited, Surface Catalyzed Reaction Products By Infra-Red Emission
-
批准号:8114348
-
项目类别:Standard Grant
-
资助金额:$4.96万
-
财政年份:1982
-
负责人:Bret Halpern
-
依托单位:
Detection of Vibrationally Excited, Surface Catalyzed Reaction Products By Infra Red Emmission
-
批准号:7808620
-
项目类别:Standard Grant
-
资助金额:$4.99万
-
财政年份:1978
-
负责人:Bret Halpern
-
依托单位:
国内基金
海外基金
Muon--electron转换过程的实验研究
-
批准号:11335009
-
项目类别:重点项目
-
资助金额:360.0万元
-
批准年份:2013
-
负责人:李海波
-
依托单位: