A Statistical Modeling Methodology for Submicron MOS Devices and Circuits

亚微米 MOS 器件和电路的统计建模方法

• 批准号: 9501912
• 负责人: Linda Milor
• 金额: $ 14.5万
• 依托单位: University of Maryland, College Park
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-09-01 至 1998-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9501912&HistoricalAwards=false
• 关键词: Statistical; Modeling; Methodology; Submicron; MOS

The performance of an integrated circuit depends on the designers' choices and the process engineers' decisions during the manufacture of the device. Typically the choices and decisions are independent of each other with little awareness of the interplay of the two engineering domains. This research develops methods for raising the designers' awareness of the effects of circuit implementation parameters and to sensitize process engineers to the impact of processing decisions on the performance of the final circuit. A statistical model is developed to correlate device and process parameters, primarily to establish circuit performance variations on spatial and process dependencies in replicated circuits. Circuit simulators are used to solve the resultant (huge) set of nollinear differential equations. JUSTIFICATION

集成电路的性能取决于设计者的选择和工艺工程师在器件制造过程中的决定。通常，选择和决策是相互独立的，对这两个工程领域的相互作用知之甚少。这项研究开发了一些方法，以提高设计者对电路实现参数的影响的认识，并使工艺工程师对工艺决策对最终电路性能的影响敏感。开发了一个统计模型来关联器件和工艺参数，主要是为了在复制电路中建立电路性能在空间和工艺相关性上的变化。电路仿真器用于求解得到的(巨大的)非线性微分方程组。对齐