Scanning Tunneling Microscopy and Ultralow Temperature Transport Measurements on Quench Condensed Films

小行星9502920 这个实验项目涉及低温扫描隧道显微镜和电子磁输运和隧道测量强烈无序双金属薄膜。 这些实验将研究深刻的，有时是壮观的变化背后的物理效应（例如，超导体到绝缘体的转变），其发生在二维中的强无序极限中的电子系统中。 超薄金属膜是通过将组分金属热蒸发到保持在接近4K的温度下的衬底上原位制备的。扫描隧道显微镜的实验将测量原子表面结构以及它们的局域隧道态密度的变化。 这些实验从基本观点和技术观点来看都很有趣，因为结果将增加我们对金属中电子传导过程的理解。 这个实验项目包括低温扫描隧道显微镜和电子磁输运和隧道测量强烈无序的双金属薄膜。 这些实验将研究深刻的，有时是壮观的变化背后的物理效应（例如，超导体到绝缘体的转变），其发生在二维中的强无序极限中的电子系统中。 超薄金属膜是通过将组分金属热蒸发到保持在接近4K的温度下的衬底上原位制备的。扫描隧道显微镜的实验将测量原子表面结构以及它们的局域隧道态密度的变化。 这些实验从基本观点和技术观点来看都很有趣，因为结果将增加我们对金属中电子传导过程的理解。 ***

9502920 Valles This experimental project involves low temperature scanning tunneling microscopy and electron magneto-transport and tunneling measurements on strongly disordered ultrathin films. The experiments will investigate the physical effects behind the profound and sometimes spectacular changes (e.g.,the superconductor to insulator transition) that occur in electronic systems in the strongly disordered limit in two dimensions. The ultra-thin metal films are fabricated in situ by thermal evaporation of the constituent metals onto substrates held at temperatures near 4 K. Experiments with the scanning tunneling microscope will measure the atomic surface structure as well as variations in their local tunneling density of states. The experiments are of interest from fundamental viewpoints, as well as technical viewpoints, as the results will increase our understanding of electronic conduction processes in metals. %%% This experimental project involves low temperature scanning tunneling microscopy and electron magneto-transport and tunneling measurements on strongly disordered ultrathin films. The experiments will investigate the physical effects behind the profound and sometimes spectacular changes (e.g., the superconductor to insulator transition) that occur in electronic systems in the strongly disordered limit in two dimensions. The ultra-thin metal films are fabricated in situ by thermal evaporation of the constituent metals onto substrates held at temperatures near 4 K. Experiments with the scanning tunneling microscope will measure the atomic surface structure as well as variations in their local tunneling density of states. The experiments are of interest from fundamental viewpoints, as well as technical viewpoints, as the results will increase our understanding of electronic conduction processes in metals. ***