SBIR Phase II: Magnetoresistive Wafer Scale Memory with on Board Search/Cache Functions

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9508538 Pohm This SBIR Phase II is for research on the commercialization of memories based on giant magnetoresistive materials. Test arrays of a small, high-output memory cell will be fabricated and evaluated for defect statistics and performance. Using the defect statistics, suitable redundancy and sparing strategies will be developed. Test structures for evaluating power and data busses will also be built and will be used to measure operating characteristics of the bus designs. Finally, a subsection of a 16 Megabit die will be fabricated for evaluation.