Integrated Multi-Track GMR Read/Write Head with CMOS-SOS Circuitry

具有 CMOS-SOS 电路的集成多轨 GMR 读/写头

• 批准号: 9260451
• 负责人: Arthur Pohm
• 金额: $ 4.97万
• 依托单位: Nonvolatile Electronics Inc
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1993
• 资助国家: 美国
• 起止时间: 1993-05-01 至 1994-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9260451&HistoricalAwards=false
• 关键词: Integrated; Multi; Track; GMR; Read

An integrated multi-rack read/write head and associated circuitry suitable for high performance (100 MHz), ultra-high density (2x109 bits/in2) recording will be designed. The magnetoresistive sensor wil use Giant Magnetoresistance Ratio (GMR) material, which provied a much higher signal (about ten times) compared with standard materials because of higher magnetoresistance and higher sheet resistivity. The orientation of the sensor wil be orthogonal to the orientation of the sensors in use today for improved reliability and higher density. The associate circuitry will be signed using CMOS on a substrate of Silicon on Sapphire (SOS) which has both favorable wear capability compared to silicon, and in addition has lower parasitic capacitances that silicon, hence improving the electrical performance of the on-chip circuitry. Sensors for servo track will be included in the design. In Phase I the head will be designed, and satisfactory GMR materials will be demonstrated on a substrate comprised of permalloy shielding material on SOS. The read portion on the head designed in Phase I, except for shields, will be fabricated and demonstrated in Phase II.

一种集成的多机架读/写头和相关电路 适用于高性能（100 MHz）、超高密度 （2x 109 bits/in 2）记录将被设计。 的 磁阻传感器将使用巨磁阻比 (GMR)材料，它提供了一个更高的信号（约10 与标准材料相比， 磁阻和较高的薄层电阻率。 的取向 将与传感器的取向正交 在当今用于提高可靠性和更高密度。 的 相关电路将使用CMOS在 蓝宝石上硅（SOS），具有良好的耐磨性 与硅相比， 寄生电容，从而提高了 片上电路的电气性能。 传感器 伺服跟踪将包括在设计中。 在第一阶段，头部 将设计，并满意的GMR材料将 在由坡莫合金屏蔽层组成的基底上演示 关于SOS 阶段中设计的磁头上的读取部分 我，除了盾牌，将被制造和证明， 第二阶段。