Optical Nonlinearities and Electrooptic Effects in Asymmetric Quantum Structures

9509257里昂该建议提出了新的操作原理和方法来构造用于光信号的开关。 这里提出的器件利用嵌入在平行板金属波导中的非对称半导体量子结构（例如阶梯量子阱）。 初步工作表明，这些结构可以用来构建超快电光和全光器件。 特别是，计算表明，这些结构将支持耦合场（耦合电和光脉冲）孤子。 拟议工作的目标是研究这些结构的物理特性，使用这些信息来完善模型和计算，并根据这些原理制造和测试设备。 这项工作将涉及各种类型的非对称量子结构，超快电脉冲在平行板金属波导上的传播，以及这些电脉冲与通过嵌入波导内的半导体传播的光脉冲的相互作用。 分子束外延（MBE）将用于生长半导体材料，然后将使用各种光学和电学探针进行分析。 电脉冲将用超快光脉冲产生和测量。 基于这些新知识，将设计、制造和测试光开关。 ***

9509257 Lyon This proposal suggests new operating principles and approaches to constructing switches for optical signals. The devices proposed here utilize an asymmetric semiconductor quantum structure (such as a stepped quantum well) embedded in a parallel plate metallic waveguide. Preliminary work indicates that these structures can be used to construct ultrafast electrooptic and all-optical devices. In particular, calculations have been performed which suggest that these structures will support coupled-field (coupled electrical and optical pulses) solitons. The objectives of the proposed work are to study the physics of these structures, use this information to refine the models and calculations, and to fabricate and test devices based on these principles. The work will involve investigations of various types of asymmetric quantum structures, ultrafast electrical pulse propagation on parallel-plate metallic waveguides, and the interactions of these electrical pulses with optical pulses traveling through the semiconductor embedded within the waveguide. Molecular beam epitaxy (MBE) will be used to grow the semiconductor materials, which will then be analyzed with various optical and electrical probes. The electrical pulses will be generated and measured with ultrafast optical pulses. Building upon this new knowledge, optical switches will be designed, fabricated, and tested. ***