Numerical Approaches for Semiconductor Nanotechnology

这项研究将集中于适合于纳米结构分析和设计的数值模拟方法的发展。研究将涉及量子线和量子点结构，目标是开发全面的物理和数值模型，以解释实验纳米结构在广泛温度范围内的测量结果。这项工作还将考虑基于修改现有硅技术的新结构，并将其扩展到纳米范围。一个主要的努力将是在三维模型领域，将以前的工作扩展到更现实的情况，并提高有效处理超大数值问题的能力。其他感兴趣的问题包括原子团簇表征的直接数值方法的发展，如扫描隧道显微镜（STM）在纳米结构表面附近的书写尖端和具有表面发射拓扑结构的微结构半导体激光器光学行为的三维求解器。对于这两种应用，早期为解决半导体结构的大稀疏特征值问题而开发的独特方法将被改编和扩展。

9509751 Kerkhoven This research will focus on the development of numerical simulation approaches suitable for the analysis and design of nanostructures. The investigations will address quantum wire and quantum dot structures, with the goal to develop comprehensive physical and numerical models that can explain the results of measurements on experimental nanostructures, in a wide range of temperatures. The work will also consider new structures based on modification of existing silicon technology scaled into the nanometer range. A major effort will be in the area of 3-D models, to extend previous work to even more realistic situations, and improve the ability to treat extremely large numerical problems efficiently. Among other problems of interest is the development of direct numerical approaches for the characterization of atomic cluster, like the writing tip of a Scanning Tunneling Microscope (STM) in proximity of the surface of a nanostructure and 3-D solvers for the optical behavior of microstructure semiconductor lasers with surface emitting topology. For both applications, the unique approaches that were developed earlier for the solution of large sparse eigenvalue problems for semiconductor structures, will be adapted and extended.