Acquisition of Gallium Focused Ion Beam Instrumentation

将获得一台聚焦离子束（FIB）仪器，用于材料科学和生物应用研究。该仪器产生高电流密度，高度准直的正镓离子光束，能量范围在5到30千电子伏特之间。这种光束可用于在小于100纳米的尺度上溅射、制模或沉积。这些过程可以通过二次电子或离子成像动态观察。具体应用包括：(1)用于电子器件降解研究的透射电镜样品的微加工；(2)半导体中掺杂物分布的纳米级成像；(3)适用于各种低功率、高频半导体电子器件、金属/超导体异质结构和隧道器件的介观光刻；(4)生物材料细胞内结构的层析成像。这项研究包含了定义聚焦离子束仪器的广泛新应用的元素，如掺杂测绘和生物材料的层析成像。这些新颖的应用可能会鼓励和加速该技术的发展。此外，溅射和沉积过程的直接可视化可以提高电子材料加工和微电子器件制造课程的教学方法。＊＊＊

9512474 Hull A focused ion beam (FIB) instrument will be acquired for research in materials science and biological applications. This instrument produces high current density, highly collimated beams of positive gallium ions at energies in the range between 5 and 30 kiloelectron volts. Such beams can be used to sputter, pattern, or deposit on scales of less than 100 nanometers. These processes can be viewed dynamically via imaging with secondary electrons or ions. Specific applications include: (1) micromachining of transmission electron microscopy samples for electronic device degradation studies; (2) nanoscale imaging of dopant distribution in semiconductors; (3) mesoscopic lithography for a wide range of low power and high frequency semiconductor electronic devices and metal/superconductor heterostructures and tunneling devices; (4) tomographic imaging of intracellular structure in biological materials. %%% This research incorporates elements which define broad new applications for focused ion beam instrumentation such as dopant mapping and tomographic imaging of biological materials. These novel applications can potentially encourage and accelerate the development of the technique. In addition, the direct visualization of sputtering and deposition processes can enhance teaching methods in courses relating to electronic materials processing and microelectronic device manufacturing. ***