Conference: 6th US Gallium Oxide Workshop

会议：第六届美国氧化镓研讨会

• 批准号: 2324760
• 负责人: Uttam Singisetti
• 金额: $ 1.4万
• 依托单位: SUNY at Buffalo
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2023
• 资助国家: 美国
• 起止时间: 2023-08-01 至 2024-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2324760&HistoricalAwards=false
• 关键词: Conference; 6th; US; Gallium; Oxide

Gallium oxide is an emerging ultrawidebandgap (UWBG) semiconductor that has attracted a lot of interest in recent years for next generation power and wireless applications. The gallium oxide device performance has been phenomenal in terms of breakdown voltages and device figures of merit. This performance enhancement has been underpinned by the availability of large area bulk substrates. Despite this progress there are still significant challenges both at the fundamental materials understanding and the device technology transition to real world applications. To foster fruitful discussions, collaborations and student training, the 6th US Gallium Oxide Workshop is organized in August 13-16, 2023, at the University at Buffalo (SUNY) campus in Buffalo, NY. This premier US domestic conference will provide researchers and students with a broad platform to present their results. By supporting student participation, this project will contribute towards workforce development. The project will also increase the participation of underrepresented minority (URM) students. In addition to presenting their work, the students will get an opportunity to listen to three keynote speakers and twelve invited speakers presented by academic and industry leaders. The conference will cover a wide range of topics in gallium oxide and related materials (theory, synthesis, characterization, devices, circuits, and systems), thus casting a wide net to capture more diverse students and attendees. All these topics have strong positive social impact both in terms of economic and energy security. The activities will increase the knowledge base in semiconductor manufacturing which is a significant contributor to the US economy.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

氧化镓是一种新兴的超宽带隙（UWBG）半导体，近年来在下一代电力和无线应用中引起了人们的极大兴趣。在击穿电压和器件性能方面，氧化镓器件的性能是惊人的。这种性能的提高是由大面积大块基板的可用性所支撑的。尽管取得了这些进展，但在基本材料理解和设备技术向现实世界应用的过渡方面仍然存在重大挑战。为了促进富有成效的讨论、合作和学生培训，第六届美国氧化镓研讨会将于2023年8月13日至16日在纽约州布法罗市的布法罗大学（SUNY）校园举行。这个美国首屈一指的国内会议将为研究人员和学生提供一个广阔的平台来展示他们的成果。通过支持学生的参与，该项目将有助于劳动力的发展。该项目还将增加代表性不足的少数民族学生的参与。除了展示他们的作品，学生们还将有机会听取由学术和行业领袖介绍的三位主题演讲者和十二位特邀演讲者的演讲。会议将涵盖氧化镓及相关材料（理论、合成、表征、器件、电路和系统）的广泛主题，从而广泛地吸引更多不同的学生和与会者。所有这些话题在经济和能源安全方面都具有强大的积极社会影响。这些活动将增加半导体制造业的知识基础，这是对美国经济的重要贡献。该奖项反映了美国国家科学基金会的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。