Theoretical and Experimental Investigation of InP-Based PNP Heterojunction Bipolar Transistors

InP基PNP异质结双极晶体管的理论与实验研究

基本信息

批准号：
9525942
负责人：
Marc Cahay
金额：
$ 19.96万
依托单位：
University of Cincinnati Main Campus
依托单位国家：
美国
项目类别：
Standard Grant
财政年份：
1996
资助国家：
美国
起止时间：
1996-06-15 至 1998-12-31
项目状态：
已结题

来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=9525942&HistoricalAwards=false
关键词：
Theoretical Experimental Investigation InP Based

项目摘要

9525942 Cahay This is a collaborative research effort between University of Cincinnati and Hughes Research Laboratory to enhance the performance of InP-based PNP Heterojunction component of the research will consist of establishing and developing an approaches, the first based on use of a drift-diffusion model using a commercial numerical simulator, and the second based on the development of an Ensemble Monte Carlo simulator which includes the effects of hole tunneling at the emitter-base junction and the effects of band-mixing between heavy and light holes throughout the device. Subsequently, the two approaches will be coupled to provide a comprehensive model of device operation. Furthermore, the thermophysics of device self-heating will be investigated through a self-consistent solution of the equations describing heat flow through the structure and the physics of charge generation and flow during device operation. To assure the accuracy of the device models, comparison of the device electrical characteristics and high frequency performance will be made with detailed measurements on devices fabricated in the laboratory and with results reported on commercially fabricated devices. In collaboration with this effort the industrial partner Hughes Research Laboratory, will provide the starting multi-layer epitaxial substrates from which the PNP HBT devices will be fabricated and will provide technical guidance in the development of the HBT's fabrication process. ***

9525942 Cahay这是辛辛那提大学和休斯研究实验室之间的一项协作研究，以增强该研究的基于INP的PNP异质结构组成部分的性能，将建立和开发一种方法，是建立和开发一种基于基于流漂移模型的基于商业模拟器的效果的首次使用，该模型包括基于几台商业模拟器的开发项目，以及该方法的开发，该模拟者的开发项目的开发项目的开发项目均可建立螺旋罗 emitter-base junction and the effects of band-mixing between heavy and light holes throughout the device. Subsequently, the two approaches will be coupled to provide a comprehensive model of device operation. 此外，将通过描述通过结构的热流以及设备操作过程中电荷产生和流动物理的方程式的方程式来研究设备自加热的热物理。为了确保设备模型的准确性，将通过对实验室中制造的设备进行详细测量以及在商业化的设备上进行的结果进行比较。工业合作伙伴休斯研究实验室将与这项工作合作，将提供启动的多层外延底物，将制造PNP HBT设备，并在HBT制造过程的开发方面提供技术指导。 ***