Theoretical and Experimental Investigation of InP-Based PNP Heterojunction Bipolar Transistors

这是辛辛那提大学和休斯研究实验室之间的合作研究成果，旨在提高InP基PNP异质结组件的性能。该研究将包括建立和开发一种方法，第一种是基于使用商用数值模拟器的漂移扩散模型，第二种是基于Ensemble Monte Carlo模拟器的开发，该模拟器包括发射极-基极结处的空穴隧穿效应和整个器件中重空穴和轻空穴之间的能带混合效应。 随后，这两种方法将被耦合，以提供一个全面的设备操作模型。 此外，器件自加热的热物理将通过一个 描述通过结构的热流以及器件操作期间电荷产生和流动的物理过程的方程的自洽解。 为确保器械模型的准确性，将对器械电气特性和高频性能进行比较，详细测量实验室制造的器械，并报告商业制造器械的结果。 与此合作，工业合作伙伴休斯研究实验室将提供用于制造PNP HBT器件的起始多层外延衬底，并将为HBT制造工艺的开发提供技术指导。 ***

9525942 Cahay This is a collaborative research effort between University of Cincinnati and Hughes Research Laboratory to enhance the performance of InP-based PNP Heterojunction component of the research will consist of establishing and developing an approaches, the first based on use of a drift-diffusion model using a commercial numerical simulator, and the second based on the development of an Ensemble Monte Carlo simulator which includes the effects of hole tunneling at the emitter-base junction and the effects of band-mixing between heavy and light holes throughout the device. Subsequently, the two approaches will be coupled to provide a comprehensive model of device operation. Furthermore, the thermophysics of device self-heating will be investigated through a self-consistent solution of the equations describing heat flow through the structure and the physics of charge generation and flow during device operation. To assure the accuracy of the device models, comparison of the device electrical characteristics and high frequency performance will be made with detailed measurements on devices fabricated in the laboratory and with results reported on commercially fabricated devices. In collaboration with this effort the industrial partner Hughes Research Laboratory, will provide the starting multi-layer epitaxial substrates from which the PNP HBT devices will be fabricated and will provide technical guidance in the development of the HBT's fabrication process. ***