Theoretical and Experimental Investigation of InP-Based PNP Heterojunction Bipolar Transistors

InP基PNP异质结双极晶体管的理论与实验研究

• 批准号: 9525942
• 负责人: Marc Cahay
• 金额: $ 19.96万
• 依托单位: University of Cincinnati Main Campus
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1996
• 资助国家: 美国
• 起止时间: 1996-06-15 至 1998-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9525942&HistoricalAwards=false
• 关键词: Theoretical; Experimental; Investigation; InP; Based

9525942 Cahay This is a collaborative research effort between University of Cincinnati and Hughes Research Laboratory to enhance the performance of InP-based PNP Heterojunction component of the research will consist of establishing and developing an approaches, the first based on use of a drift-diffusion model using a commercial numerical simulator, and the second based on the development of an Ensemble Monte Carlo simulator which includes the effects of hole tunneling at the emitter-base junction and the effects of band-mixing between heavy and light holes throughout the device. Subsequently, the two approaches will be coupled to provide a comprehensive model of device operation. Furthermore, the thermophysics of device self-heating will be investigated through a self-consistent solution of the equations describing heat flow through the structure and the physics of charge generation and flow during device operation. To assure the accuracy of the device models, comparison of the device electrical characteristics and high frequency performance will be made with detailed measurements on devices fabricated in the laboratory and with results reported on commercially fabricated devices. In collaboration with this effort the industrial partner Hughes Research Laboratory, will provide the starting multi-layer epitaxial substrates from which the PNP HBT devices will be fabricated and will provide technical guidance in the development of the HBT's fabrication process. ***

9525942 Cahay 这是辛辛那提大学和休斯研究实验室之间的一项合作研究成果，旨在提高基于 InP 的 PNP 异质结的性能。该研究的组成部分将包括建立和开发一种方法，第一个基于使用商用数值模拟器的漂移扩散模型，第二个基于 Ensemble Monte Carlo 模拟器的开发，其中包括孔隧道效应 发射极-基极结以及整个器件中重空穴和轻空穴之间的能带混合的影响。 随后，这两种方法将结合起来提供一个全面的设备操作模型。 此外，器件自加热的热物理学将通过描述流过结构的热流的方程的自洽解以及器件运行期间电荷产生和流动的物理原理来研究。 为了确保器件模型的准确性，将通过对实验室制造的器件进行详细测量并与商业制造的器件报告的结果来比较器件的电气特性和高频性能。 工业合作伙伴休斯研究实验室将与这项工作合作，提供用于制造 PNP HBT 器件的起始多层外延基板，并将为 HBT 制造工艺的开发提供技术指导。 ***