SBIR Phase I: Anti-Reflective Coatings (ARCs) for 193nm Lithography

SBIR 第一阶段：用于 193nm 光刻的抗反射涂层 (ARC)

• 批准号: 9561462
• 负责人: Jim Meador
• 金额: $ 7.5万
• 依托单位: Brewer Science, Inc.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1996
• 资助国家: 美国
• 起止时间: 1996-02-01 至 1996-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9561462&HistoricalAwards=false
• 关键词: SBIR; Phase; Anti; Reflective; Coatings

This Small Business Innovation Research (SBIR) Phase I project will develop thermosetting anti-reflective coatings (ARCs) that are optimum for 193 nm optical lithography applications. This is the most likely exposure wavelength for the generation of equipment that follows deep-UV (248 nm). Since reflectivity coefficients at this shorter wavelength are similar or (in some instances) higher than those at 248 nm, a need for an ARC undeneath the 193 nm resist can be expected. The research objective of is to provide at least one outstanding or optimum 193-nm ARC for manufacturers to use during resist development and for the production of semiconductor devices. Light absorbing chromaphore (193 nm) will be chemically-attached to three different polymer hosts. The host polymers have been selected for high aliphatic content and the expectation that they will exhibit improved oxygen-plasma etch rates. To assure insolubility in photoresist solvents, the dye-attached polymers will be formulated into thermosetting systems (ARCs). The profile of 193 nm resist poly(methyl methacrylate) (PMMA) at optimum exposure and dose will be used to optimize ARC chemistry. Plasma etch rates of the cured 193 nm ARCs will be compared to ARC CD11. ARC stability and manufacturability will be determined. ARCs developed in Phase I would be further improved in Phase II and characterized with an amplified resist. A successful product will be useful to integrated circuit makers, offering promise for increased packing density on semiconductor substrates.

这个小企业创新研究（SBIR）第一阶段项目将开发最适合193nm光刻应用的热固性抗反射涂层（arc）。这是继深紫外（248纳米）之后最可能产生的曝光波长。由于这个较短波长的反射率系数与248nm的相似或（在某些情况下）高于248nm的反射率系数，因此可以预期需要在193nm的抗蚀剂下使用ARC。研究目标是为制造商在抗蚀剂开发和半导体器件生产期间提供至少一种杰出或最佳的193nm电弧。吸收光的发色团（193nm）将化学地附着在三种不同的聚合物宿主上。宿主聚合物被选择为高脂肪族含量，并期望它们将表现出改善的氧等离子体蚀刻速率。为了保证在光刻胶溶剂中的不溶性，染料附着的聚合物将被配制成热固性体系（arc）。在最佳暴露和剂量下，193nm抗聚甲基丙烯酸甲酯（PMMA）的轮廓将用于优化ARC化学。193 nm固化电弧的等离子体蚀刻速率将与ARC CD11进行比较。电弧稳定性和可制造性将被确定。在I期开发的arc将在II期进一步改善，并以放大的耐药为特征。一个成功的产品将对集成电路制造商有用，为半导体基板上增加封装密度提供了希望。