SBIR Phase I: Anti-Reflective Coatings (ARCs) for 193nm Lithography

这个小型企业创新研究(SBIR)第一阶段项目将开发最适合193 nm光学光刻应用的热固性减反射涂层(ARC)。这是深紫外光(248 Nm)之后最有可能产生的设备的曝光波长。由于在此较短波长的反射率系数与248 nm处的反射率系数相似或(在某些情况下)高于248 nm处的反射率系数，因此可以预期对193 nm抗蚀剂下的ARC的需求。的研究目标是提供至少一种出色的或最佳的193 nm ARC，供制造商在抗蚀剂开发和半导体器件生产中使用。光吸收发色团(193 Nm)将以化学方式附着在三种不同的聚合物主体上。选择高脂肪含量的主体聚合物，并期望它们将表现出更好的氧等离子体刻蚀速率。为了确保不溶于光致抗蚀剂溶剂，染料附着型聚合物将被配制成热固性系统(ARC)。193 nm抗蚀剂聚甲基丙烯酸甲酯(PMMA)在最佳曝光和剂量下的轮廓将被用于优化ARC化学。将对固化的193 nm电弧的等离子蚀刻速率与ARC CD11进行比较。将确定电弧稳定性和可制造性。在第一阶段形成的弧光将在第二阶段得到进一步改进，并以放大的抗蚀剂为特征。一款成功的产品将对集成电路制造商有用，为提高半导体基板上的封装密度提供了希望。

This Small Business Innovation Research (SBIR) Phase I project will develop thermosetting anti-reflective coatings (ARCs) that are optimum for 193 nm optical lithography applications. This is the most likely exposure wavelength for the generation of equipment that follows deep-UV (248 nm). Since reflectivity coefficients at this shorter wavelength are similar or (in some instances) higher than those at 248 nm, a need for an ARC undeneath the 193 nm resist can be expected. The research objective of is to provide at least one outstanding or optimum 193-nm ARC for manufacturers to use during resist development and for the production of semiconductor devices. Light absorbing chromaphore (193 nm) will be chemically-attached to three different polymer hosts. The host polymers have been selected for high aliphatic content and the expectation that they will exhibit improved oxygen-plasma etch rates. To assure insolubility in photoresist solvents, the dye-attached polymers will be formulated into thermosetting systems (ARCs). The profile of 193 nm resist poly(methyl methacrylate) (PMMA) at optimum exposure and dose will be used to optimize ARC chemistry. Plasma etch rates of the cured 193 nm ARCs will be compared to ARC CD11. ARC stability and manufacturability will be determined. ARCs developed in Phase I would be further improved in Phase II and characterized with an amplified resist. A successful product will be useful to integrated circuit makers, offering promise for increased packing density on semiconductor substrates.