SBIR PHASE I: Z-Axis Connectors Using Microporous Materials

SBIR 第一阶段：使用微孔材料的 Z 轴连接器

• 批准号: 9561678
• 负责人: Charles Beetz
• 金额: $ 7.48万
• 依托单位: NANOSCIENCES CORP
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1996
• 资助国家: 美国
• 起止时间: 1996-03-01 至 1996-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9561678&HistoricalAwards=false
• 关键词: SBIR; PHASE; Axis; Connectors; Using

This Small Business Innovation Research Phase I project will demonstrate a novel z-axis connector technology using microporous materials. In this project, aluminum plates, 0.05-0.5 mm thick, would be anodized to form microporous alumina with densely packed, straight vertical (z-axis) pores of submicron diameters, and length to diameter ratios exceeding 500. When the pores are plated up with metals, the plates would have very high resistivity along the plane of the plate, and very low resistivity through the plate thickness, thereby enabling reliable z-axis connections between 2 planar circuit arrays, on sub-micron circuit elements. Such a mass connector between 2 semiconductor circuits would scale to large areas, provide micron-scale connections, and require no precision alignment between the connected circuits and would be low cost. With development in microporous alumina and silicon, it may be possible to form z-axis connections between microcircuits in a growth/deposition process, forming the connection directly on microcircuits without mechanical placement steps between circuits. Anticipated benefits include: (1) the connection of dense arrays of microsensors, such as pressure, temperature or light sensor `pixels`, to a rear read-out chip containing signal processing, A-D conversion, etc. (`smart pixels`); (2) vertically stacked (z-stacked) VLSI circuits, such as memories, or processor and cache stacks of very high density; and (3) large flat panel displays, for example by connecting thin film transistor arrays to LCD active matrix pixels reliably over a large area.

该小型企业创新研究第一阶段项目将展示一种使用微孔材料的新型 z 轴连接器技术。在该项目中，0.05-0.5毫米厚的铝板将被阳极氧化形成微孔氧化铝，该微孔氧化铝具有致密的亚微米直径的直垂直（z轴）孔，长径比超过500。当孔被金属电镀时，板沿板平面将具有非常高的电阻率，而整个板厚度的电阻率非常低，从而使 亚微米电路元件上 2 个平面电路阵列之间的可靠 z 轴连接。两个半导体电路之间的这种大规模连接器将扩展到大面积，提供微米级连接，并且不需要所连接的电路之间的精确对准，并且成本较低。随着微孔氧化铝和硅的发展，有可能在生长/沉积过程中在微电路之间形成z轴连接，直接在微电路上形成连接，而无需电路之间的机械放置步骤。 预期的好处包括：（1）将密集的微传感器阵列（例如压力、温度或光传感器“像素”）连接到包含信号处理、A-D转换等的后部读出芯片（“智能像素”）； (2) 垂直堆叠（z 堆叠）VLSI 电路，例如存储器、或非常高密度的处理器和高速缓存堆栈； (3)大型平板显示器，例如通过在大面积上可靠地将薄膜晶体管阵列连接到LCD有源矩阵像素。