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CAREER: Native Oxides on the III-V Nitrides and Chemical Cleaning of the Semiconductor Surfaces

CAREER: Native Oxides on the III-V Nitrides and Chemical Cleaning of the Semiconductor Surfaces
职业:III-V 族氮化物上的天然氧化物和半导体表面的化学清洗
批准号:
9624995
负责人:
Suzanne Mohney
金额:
$40.62万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1996
资助国家:
美国
项目状态:
已结题
起止时间:
1996-05-15 至 2002-04-30

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中文摘要
翻译
9624995莫尼这个职业研究项目致力于III-V氮化物表面上天然氧化物的形成和化学刻蚀。将研究有意和无意在半导体表面形成的氧化物的化学和结构性质,并开发用于进一步器件加工的半导体表面的化学加工步骤。将使用包括光谱椭偏测量、俄歇电子能谱、X射线光电子能谱以及常规和高分辨率透射电子显微镜在内的补充技术。氧化物的性质目前尚不清楚,它将强烈影响哪种化学腐蚀剂将最有效地去除它。考虑到许多加工步骤,如欧姆接触和肖特基势垒的形成,在化学准备和进一步加工之间允许短暂暴露在空气中时,最方便地完成了许多加工步骤,因此将开发适当的化学处理方法来去除氧化物,并以最少的残余氧和碳污染制造表面。通过对GaN的非反应性欧姆接触和/或肖特基势垒的制备和表征,来比较化学表面制备过程的有效性。除了基础研究活动,该项目还将半导体表面制备材料纳入电子和光子材料本科实验室课程。将采取的其他教育举措包括更新关于金属科学和工程的高级实验室课程,在本科课程中更多地使用计算机建模和可视化,以及增加本科生对研究的参与。拟议的基础研究预计将为先进的微电子设备和电路贡献与技术相关的基础材料科学知识。从这项研究项目中获得的知识和理解有望为提高用于计算、信息处理和电信的先进器件和电路的性能做出总体贡献,为设计和生产改进的材料和工艺提供基本的理解和基础。*_
英文摘要
9624995 Mohney This CAREER research project addresses the formation and the chemical etching of native oxides on III-V nitride surfaces. The chemical and structural nature of intentionally and unintentionally formed oxides on the semiconductor surfaces will be studied, and chemical processing steps for the preparation of semiconductor surfaces for further devic e processing will be developed. Complementary techniques including spectroscopic ellipsometry, Auger electron spectroscopy, x-ray photoelectron spectroscopy, and conventional and high resolution transmission electron microscopy will be employed. The nature of the oxide, which is currently unknown, will strongly influence which chemical etchants w ill be most effective for removing it. Appropriate chemical treatments for removing the oxide and producing surfaces with the least residual oxygen and carbon contamination will be developed, given that many processing steps, such as the formation of ohmic contacts and Schottky barriers, are most conveniently accomplished when a brief exposure to air is allowed between chemical preparation and further processing. Comparison of the effectiveness of the chemical surface preparation procedures will be accomplished through the fabrication and characterization of non-reactive ohmic contacts and/or Schottky barriers to GaN. %%% Along with the basic research activity, this project incorporates material on surface preparation of semiconductors into an undergraduate laboratory course on electronic and photonic materials. Other educational initiatives to be undertaken include updating a senior-level laboratory course on metals science and engineering, increasing the use of c omputer modeling and visualization in the undergraduate curriculum, and increasing participation of undergraduates in research. The proposed basic investigations are expected to contribute fundamental materials science knowledge of technological relevance to advanced microelectronic devices and circuits. The knowledge and understanding gained fro m this research project is expected to contribute in a general way to improving the performance of advanced devices and circuits used in computing, information processing, and telecommunications by providing a fundamental understanding and a basis for designing and producing improved materials and processes. *** _
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国内基金
海外基金
Native音乐数据模型及查询语言的研究
  • 批准号:
    60803016
  • 项目类别:
    青年科学基金项目
  • 资助金额:
    20.0万元
  • 批准年份:
    2008
  • 负责人:
    王朝坤
  • 依托单位: