Investigation of Factors Affecting the Performance of Electrical Contacts to Gallium Nitride
Investigation of Factors Affecting the Performance of Electrical Contacts to Gallium Nitride
批准号:
9504259
负责人:
Suzanne Mohney
金额:
$1.8万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1995
资助国家:
美国
项目状态:
已结题
起止时间:
1995-06-01 至 1996-11-30
中文摘要
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英文摘要
9504259 Mohney This Research Planning Grant focuses on studies to understand fundamental materials science aspects of thermally stable electrical contacts to group III nitrides, primarily Gallium Nitride (GaN). Thermodynamic calculations will be used, along with x-ray diffraction and electron probe microanalysis of bulk phase equilibria samples, to determine key features of the solid phase diagrams in the Metal-Ga-N systems. This investigation will aid in the selection of thermally stable contact materials. In addition, because of the high vapor pressure of N2 over GaN and the presumed role of N vacancies on the carrier concentration in GaN, the gas phase equilibria are expected to exert a greater influence on the thermal stability and electrical properties of contacts to GaN than they do for contacts to the other III-V semiconductors. Both novel and conventional methods to control the GaN point defect concentration and the contact/GaN barrier height will then be evaluated for their potential to engineer the electrical properties of those contacts that are already attractive from the standpoint of thermal stability. These methods will include attempts to manipulate the N vacancy concentration immediately beneath the contact/GaN interface to influence the n-type carrier concentration. The role of the work function of the contact material on the barrier height and subsequent performance of the contact will also be evaluated. %%% While this project will focus primarily on the development of electrical contacts to Gallium Nitride, it will also be of benefit for future design of contacts to other group III nitrides, and will contribute to a greater understanding of materials issues for these semiconductors. During the planning period of the project, at least two model systems will be selected to test ideas for controlling the electrical properties and stability of contacts to Gallium Nitride. The planning period will aid the PI in accomplishing enough prelimin ary work to show the promise of ideas or to modify them based on the data acquired. Thus, support during the planning period will aid the PI in preparing a more competitive full proposal. ***
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REU Site: Nanomanufacturing of Emerging 2D Materials and Devices
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批准号:2244201
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项目类别:Standard Grant
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资助金额:$40.5万
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财政年份:2023
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负责人:Suzanne Mohney
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依托单位:
NSF-BSF: New Approaches to Contacts to 2D Semiconductors
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批准号:2227346
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项目类别:Standard Grant
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资助金额:$41.0万
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财政年份:2022
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负责人:Suzanne Mohney
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依托单位:
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批准号:1410334
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项目类别:Continuing Grant
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资助金额:$33.6万
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财政年份:2014
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负责人:Suzanne Mohney
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依托单位:
Nanoengineering Electrodes for Reliable Microelectromechanical Ohmic Contact Switches
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批准号:0800619
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项目类别:Standard Grant
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资助金额:$25.0万
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财政年份:2008
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负责人:Suzanne Mohney
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依托单位:
Contacts to Group III Nitride Semiconductor Alloys
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批准号:0308786
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项目类别:Continuing Grant
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资助金额:$0.0万
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财政年份:2003
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负责人:Suzanne Mohney
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依托单位:
Acquisition of a Field Emission Electron Gun for a Scanning Auger Microscope
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批准号:0216779
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项目类别:Standard Grant
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资助金额:$12.23万
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财政年份:2002
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负责人:Suzanne Mohney
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依托单位:
Integration of Technology into the Materials Science and Engineering Curriculum
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批准号:9952597
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项目类别:Standard Grant
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资助金额:$32.0万
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财政年份:2000
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负责人:Suzanne Mohney
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依托单位:
REU Site: Materials Stability and Reliability
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批准号:9731860
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项目类别:Continuing Grant
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资助金额:$20.54万
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财政年份:1998
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负责人:Suzanne Mohney
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依托单位:
CAREER: Native Oxides on the III-V Nitrides and Chemical Cleaning of the Semiconductor Surfaces
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批准号:9624995
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项目类别:Continuing Grant
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资助金额:$40.62万
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财政年份:1996
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负责人:Suzanne Mohney
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依托单位:
国内基金
海外基金
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批准号:31970520
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项目类别:面上项目
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资助金额:58.0万元
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批准年份:2019
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负责人:姚小贞
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依托单位: