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Contacts to Group III Nitride Semiconductor Alloys

Contacts to Group III Nitride Semiconductor Alloys
III 族氮化物半导体合金联系人
批准号:
0308786
负责人:
Suzanne Mohney
金额:
$0.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2003
资助国家:
美国
项目状态:
已结题
起止时间:
2003-06-01 至 2007-08-31

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中文摘要
翻译
本计画系针对第三族氮化物半导体合金之欧姆接触。特别是,半导体合金的成分变化时,接触退火将进行调查。这与最近观察到的Al在AlxGa 1-xN中的富集和Ga在退火的Ni、Pd和Au接触中的择优析出相一致。为了建立描述这种现象的热力学和动力学框架,将研究金属类型(后过渡金属与前过渡金属)和半导体合金成分(AlxGa_(1-xN),InxAl_(1-xN)或InxGa_(1-xN))的影响。还将评估半导体合金中的成分变化对接触的电性能的影响。材料表征工作将主要依赖于透射电子显微镜、X射线光电子能谱和扫描俄歇显微镜,而电学表征将包括电流-电压、电容-电压和欧姆接触电阻测量。该项目解决了与具有技术相关性的电子/光子材料相关的基础研究问题。III族氮化物半导体合金电接触的基本进展将有助于开发用于节能照明的固态发射器和用于移动的通信的在高功率和高频率下操作的晶体管。该项目还为一名研究生和一名或多名本科生的培训创造了机会。此外,首席研究员将把她的研究计划的各个方面纳入她的课堂教学。她的外展活动-少数民族学生暑期研究机会计划;科学和工程研究中的女性; Nittany营(6年级和7年级女孩的科学营)促进科学超越了大学的传统围墙。***
英文摘要
This project addresses ohmic contacts to the group III nitride semiconductor alloys. In particular, compositional shifts in semiconductor alloys when contacts are annealed will be investigated. This follows recent observations of enrichment of Al in Alx Ga1-x N and preferential incorpora-tion of Ga in annealed Ni, Pd and Au contacts. The influence of the type of metal (late versus early transition metal) and composition of the semiconductor alloy (Alx Ga1-x N, Inx Al1-x N or Inx Ga1-x N) will be studied in order to develop a thermodynamic and kinetic framework to de-scribe the phenomenon. The effect of a compositional shift in the semiconductor alloy on the electrical properties of the contacts will also be evaluated. Materials characterization efforts will rely primarily on transmission electron microscopy, x-ray photoelectron spectroscopy and scan-ning Auger microscopy, while electrical characterization will include current-voltage, capaci-tance-voltage, and ohmic contact resistance measurements. %%% The project addresses fundamental research issues associated with electronic/photonic materials having technological relevance. Basic advances in electrical contacts to the group III nitride semiconductor alloys will benefit efforts to develop solid state emitters for energy-efficient light-ing, and transistors that operate at high power and high frequencies for mobile communications. The project also creates an opportunity for the training of a graduate student and one or more un-dergraduate students. Additionally, the principal investigator will incorporate aspects of her re-search program into her classroom instruction. Her outreach activities-Summer Research Opportunities Program for minority students; Women in Science and Engineering Research; Nittany Camp (Science Camp for 6th and 7th grade Girls) promote science beyond the traditional walls of the unversity. ***
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REU Site: Nanomanufacturing of Emerging 2D Materials and Devices
NSF-BSF: New Approaches to Contacts to 2D Semiconductors
Contacts to Layered Dichalcogenide Semiconductors
Nanoengineering Electrodes for Reliable Microelectromechanical Ohmic Contact Switches
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