Microstructure-Processing-Property-Performance Relationshipsin Integrated Ferroelectric Capacitors: The PLZT/Metallic Ruthenate/TiN System

对集成铁电（Pb，La）（Zr，Ti）O_3电容器的微结构-工艺-性能-性能关系进行了12个月的综合研究。 将研究在多晶Si/Si和低应力Si-N（LSN）/Si衬底上具有金属钌酸盐（SrRuO 3-RuO 2-Ru）电极和导电TiN扩散阻挡层的电容器层结构在用于微机电系统（MEMS）中的传感器和致动器的Gbit级非易失性存储器和压电膜的应用背景下。 所提出的研究的目标包括：i）基于观察到的加工变量、微观结构特征和所得性质（例如，剩余极化、矫顽场、击穿场、压电系数、介电常数和损耗角正切）; ii）确定失效机制和条件，包括影响从衬底到底部电极的电连续性的因素; iii）在透射电子显微镜中直接原位观察非180 °畴壁运动和铁弹行为，以及高温下电极化行为的原位观察与非原位研究之间的关系。 ***

9632707 Sands A 12 month comprehensive investigation of microstructures-processing-property-performance relationship in integrated ferroelectric (Pb,La)(Zr,Ti)O3 capacitors is undertaken. A capacitor layer structure with metallic ruthenate (SrRuO3-RuO2-Ru) electrodes and a conductive TiN diffusion barrier on poly-Si/Si and low-stress Si-N (LSN)/Si substrates will be studied in the context of applications to Gbit-scale nonvolatile memory and piezoelectric membranes for sensors and actuators in MicroElectroMechanical Systems (MEMS). The objectives of the proposed research include: i) development of a model of microstructure-processing-property relationships based on observed constitutive relationship between processing variables, microstructural characteristics, and the resultant properties (e.g., remnant polarization, coercive field, breakdown field, piezoelectric coefficients, dielectric permittivity and loss tangent); ii) determination of failure mechanisms and conditions, including the factors that affect the electrical continuity from the substrate to the bottom electrode; iii) direct in situ observation of non-180o domain wall motion and ferroelastic behavior in the transmission electron microscope, and the relationship between the in situ observations and ex situ studies of electrical poling behavior at elevated temperature. ***