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RIA: Homogenization of Magneto-Optic Properties in MnBiA1 Films Through the Introduction of Nanoscale Artifical Polycrystallinity

RIA：通过引入纳米级人工多晶实现 MnBiA1 薄膜磁光特性的均质化

基本信息

批准号：
9409730
负责人：
Timothy Sands
金额：
$ 8.98万
依托单位：
University of California-Berkeley
依托单位国家：
美国
项目类别：
Standard Grant
财政年份：
1994
资助国家：
美国
起止时间：
1994-08-01 至 1997-07-31
项目状态：
已结题

来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=9409730&HistoricalAwards=false
关键词：
RIA Homogenization Magneto Optic Properties

项目摘要

9409730 Sands The principal objectives of the proposed research are i) to understand the role of A1 additions in homogenizing the microstructure of MnBi thin films and ii) to explore the application of nanoscale patterning of these films to further improving film homogeneity through suppressing the formation of a metastable low-temperature phase and reducing the effective grain size. These objectives address the primary obstacles, media noise and stability, in developing MnBi as a medium for ultra-high density magneto-optic recording at blue laser wavelengths. This technology, if realized, could offer ubiquitous access to low-cost removable and rewritable optical media for digital image and video applications. More generally, the proposed research will contribute to advances in the control of polycrystalline thin-film properties on the scale of tens of nanometers through the application of nanoscale film patterning techniques to fabricate "artificial polycrystallinity." Such control will be essential to continued application of polycrystalline storage media for ultra-high density(1Gbit/in2) magnetic recording, nonvolatile ferroelectric memories, rewritable optical storage and Gbit dynamic random access memories (DRAM) utilizing high permittivity polycrystalline oxides for charge storage. ***

9409730砂拟议的研究的主要目标是：i）了解A1添加剂在MnBi薄膜的微观结构中的作用，以及ii）探索这些薄膜的纳米级图案化的应用，以通过抑制亚稳低温相的形成和减小有效晶粒尺寸来进一步改善薄膜均匀性。这些目标解决的主要障碍，介质噪声和稳定性，在开发MnBi作为超高密度磁光记录在蓝色激光波长的介质。这项技术，如果实现，可以提供无处不在的访问低成本的可移动和数字图像和视频应用程序的可拆卸光学介质。更一般地说，拟议的研究将有助于通过应用纳米级薄膜图案化技术来制造“人工多晶性”，从而在数十纳米尺度上控制多晶薄膜特性。“这种控制对于继续使用多晶存储介质进行超高密度（1Gbit/in 2）磁记录、非易失性铁电存储器、电光存储和利用高介电常数多晶氧化物进行电荷存储的Gbit动态随机存取存储器（DRAM）至关重要。 ***