Polarization-Insensitive Double Quantum Wells for Electro-Optical Applications

用于电光应用的偏振不敏感双量子阱

• 批准号: 9633780
• 负责人: Theda Daniels-Race
• 金额: $ 9万
• 依托单位: Duke University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1997
• 资助国家: 美国
• 起止时间: 1997-03-01 至 2000-02-29
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9633780&HistoricalAwards=false
• 关键词: Polarization; Insensitive; Double; Quantum; Wells

9633780 Daniels-Race The goal of this project is to develop polarization-insensitive double quantum well (DQW) structures for applications in the modulation, detection, and amplification of optical signals. Specifically, we will investigate the growth and electron-hole interactions of tensile strained GaAs quantum wells sandwiched between InxA11-xAs barriers. With this configuration we are able to control the polarization characteristics of the optical response while maintaining compatibility with GaAs-based processing. The potential for the use of such structures in devices wherein polarization of the optical response is important has been demonstrated by our recent work in single quantum wells. In this 12 month project we will determine optimum MBE growth conditions which enhance the optical response at room temperature, as is required for device applicability. Using band-offset modeling in conjunction with optical techniques to examine structures of different barrier/well widths and strains, we will explore the DQW designs most suitable for further technological development. The primary methods of growth and characterization to be employed will be molecular beam epitaxy (MBE) and photoluminescence (PL) spectroscopy, respectively. These will be supported by electrical analysis techniques such as Hall and current-voltage measurements, X-ray diffraction, and both transmission and scanning electron microscopy. Optimal growth conditions will be examined by variation of MBE controlled (e.g.-substrate temperature, growth rate, V/III ratio, As overpressure) and structurally based (e.g.-well/barrier widths, strain, doping) parameters. As in our initial work, most of our studies will be of structures grown as GaAs substrates. However, we will also compare the optical characteristics of these structures to those of structures grown on ternary substrates, which provide lattice matching with the InA1As barrier layers. PL measurements, using temperature, excitation intensity and excitat ion wavelength, and polarization state variations, will be used to elucidate phenomena normally unobservable due to electron-hole transition selection rules for quantum wells. Our parallel goals with respect to the MBE and PL efforts will lay the necessary groundwork for development of practical devices based on these DQW's and similar structures. This is a collaborate research project between Theda Daniels-Race of Duke University and Laurie McNeil of the University of North Carolina-Chapel Hill. ***

9633780 Daniels-Race该项目的目标是开发对光学信号调制，检测和放大的应用中对极化的双重量子井（DQW）结构。 具体而言，我们将研究夹在INXA11-XAS屏障之间的拉伸紧张的GAAS量子井的生长和电子孔相互作用。 通过这种配置，我们能够控制光学响应的​​极化特性，同时保持与基于GAAS的处理的兼容性。 我们最近在单量子井中的工作证明了在光学响应极化很重要的设备中使用此类结构的潜力。 在这个12个月的项目中，我们将确定最佳的MBE增长条件，从而增强室温下的光学响应，这是设备适用性所需的。 我们将使用与光学技术结合使用频段偏移建模来检查不同屏障/井宽度和应变的结构，我们将探索最适合进一步技术开发的DQW设计。 要使用的生长和表征的主要方法分别是分子束外延（MBE）和光致发光（PL）光谱法。 这些将由电气分析技术（例如HALL和电流 - 电压测量），X射线衍射以及传输和扫描电子显微镜提供支持。 最佳生长条件将通过MBE受控的变化（例如 - 基底温度，生长速率，V/III比，过压）和基于结构基于结构的（例如 - 孔/屏障宽度，应变，掺杂）参数的变化。 与我们最初的工作一样，我们的大多数研究都是作为GAAS底物生长的结构。 但是，我们还将将这些结构的光学特性与在三元基板上生长的结构的光学特性进行比较，后者提供与Ina1as屏障层匹配的晶格。 PL测量，使用温度，激发强度和激发离子波长以及极化状态变化，将使用量子孔的电子孔孔过渡选择规则，阐明通常无法观察的现象。 我们在MBE和PL努力方面的平行目标将为开发基于这些DQW和类似结构开发实用设备的必要基础。 这是杜克大学的Theda Daniels-Race与北卡罗来纳大学 - 教堂山山的Laurie McNeil之间的合作研究项目。 ***