Determination of Hot Electron Versus Phonon-Assisted Tunneling Effects in Double Barrier Resonant Tunneling Structures

这项核磁共振研究计划补助金(RPG)将使一名年轻的少数民族女教员能够在电子材料中的量子效应现象领域制定一项具有竞争力的提案。她的背景和专业知识是这种材料和结构的分子束外延生长。申请的RPG将为PI提供必要的支持，以收集和审查额外的文献，仔细制定材料计算，以设计和生长适合她打算遵循的研究领域的双势垒共振隧道结构，与该领域的活跃研究人员建立直接联系，并进行进一步的合作。这一领域的研究方向是研究与薄层半导体中的量子限制结构相关的双势垒共振隧穿条件下的热电子和声子辅助隧穿效应。这项研究为具有超越传统器件结构和配置的潜在性能的先进电子和光子器件奠定了基础。

This MRI Research Planning Grant (RPG) will enable a young minority woman faculty member to develop a competitive proposal in the area of quantum effect phenomena in electronic materials. Her background and expertise is in the MBE growth of such materials and structures. The requested RPG will provide the PI with the support needed to gather and review additional literature, carefully formulate materials calculations needed for design and growth of double barrier resonant tunneling structures appropriate to the line of research she intends to follow, to establish direct contacts with active researchers in this field, and to further collaborations in progress. %%% Research in this field is oriented toward the examination of hot electron and phonon-assisted tunneling effects under double barrier resonant tunneling conditions associated with quantum confinement structures fabricated in thin layers of semiconductors. The research forms the basis for advanced electronic and photonic devices having potential performance beyond conventional device structures and configurations.