SBIR Phase I: High Pressure Metalorganic Chemical Vapor Deposition Growth of GaN and InGaN

SBIR 第一阶段：GaN 和 InGaN 的高压金属有机化学气相沉积生长

• 批准号: 9661323
• 负责人: Stanley Vernon
• 金额: $ 7.49万
• 依托单位: Spire Corporation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1997
• 资助国家: 美国
• 起止时间: 1997-01-01 至 1997-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9661323&HistoricalAwards=false
• 关键词: SBIR; Phase; Pressure; Metalorganic; Chemical

*** ABSTRACT 9661323 Vernon This Small Business Innovative Research Phase I project will develop an innovative, high-pressure metalorganic chemical vapor deposition (MOCVD) reaction chamber for improved growth of Group-III nitrides. Growth at pressures above one atmosphere will increase cracking efficiency of ammonia, limit material desorption, lower the density of nitrogen vacancies, and lead to better crystal quality by permitting higher temperature growth. Phase I will demonstrate growth of GaN using a high-pressure MOCVD reaction chamber, operating up to ten-atmospheres pressure. The chamber will be a vertical, inverted-flow design to minimize convection. MOCVD growth of the first GaN laser diode at Nichia used a configuration which simulates high pressure with a "push" flow orthogonal to the growth stream. At Spire, high-pressure MOCVD has been successfully employed for InP growth using substantially less phosphine than normally required. In fact, InP with specular surfaces and good crystal quality has been deposited at three atmospheres with a V:III ratio of 1:1, the lowest ratio ever reported for the successful growth of InP. Phase II will develop growth parameters for GaN, InGaN, and AlGaN device structures. Process optimization will include use of nitrogen in the carrier gas to better confine heat to the wafer surface by reducing thermal conductivity. The market potential for GaN is tremendous, especially in optical storage (blue lasers and LEDs) and high-temperature electronics. Products made from this material system are already in large demand. If successful, high-pressure MOCVD may be the process of choice for GaN growth. Spire will offer high-pressure reactors to device manufacturers, while we use this technology to expand our optoelectronics epitaxial service business to include structures for shorter-wavelength devices. ***

* 摘要 9661323弗农 该小型企业创新研究第一阶段项目将开发一种创新的高压金属有机化学气相沉积（MOCVD）反应室，以改善III族氮化物的生长。在高于一个大气压的压力下生长将增加氨的裂解效率，限制材料解吸，降低氮空位的密度，并通过允许更高的温度生长而导致更好的晶体质量。第一阶段将展示使用高压MOCVD反应室生长GaN，操作压力高达10个大气压。灭菌室将采用垂直逆流设计，以最大限度地减少对流。在Nichia的第一个GaN激光二极管的MOCVD生长使用了模拟高压的配置，其具有与生长流正交的“推”流。在Spire，高压MOCVD已成功用于InP生长，使用的磷化氢比通常所需的少得多。事实上，具有镜面表面和良好晶体质量的InP已经在三个大气压下沉积，V：III比率为1：1，这是有史以来报道的成功生长InP的最低比率。第二阶段将开发GaN、InGaN和AlGaN器件结构的生长参数。工艺优化将包括在载气中使用氮气，以通过降低热导率来更好地将热量限制在晶片表面。 GaN的市场潜力巨大，特别是在光存储（蓝光激光器和LED）和高温电子产品方面。由这种材料系统制成的产品已经有很大的需求。如果成功，高压MOCVD可能是GaN生长的首选工艺。Spire将为器件制造商提供高压反应堆，而我们则利用这项技术扩展光电子外延服务业务，以包括更短波长器件的结构。***