Mutual Control of Carriers and Light in Low-Dimensional Semiconductor Structures

小行星9705403 这个新项目是D。 Citrin在华盛顿州立大学和T.密歇根大学的诺里斯。它解决了低维半导体结构的响应亚皮秒形状的光脉冲。 特别是，我们将采用定制的光脉冲入射在半导体光学微腔相干激发激子的人口，然后去激发他们在亚皮秒的时间尺度。 重点抓好 由于在100 GHz重复率下控制激子数量，系统的光学非线性的超快调制。 此外，在这个项目中，我们将探索使用半导体中的整形光脉冲在量子威尔斯阱中产生可调谐的太赫兹电磁波形，在存在和不存在额外的外部施加的强电磁场。 太赫兹波的控制将通过相干控制和光激发电子-空穴波包动力学的思想来实现。 %这是D.西特林是华盛顿州立大学的理论家和实验家。 密歇根大学的诺里斯。 持续时间极短的激光脉冲将用于控制电子在基于微扰器的结构中的行为。这个新项目将从根本上解决， 短脉冲通过小的半导体传播，以及电子如何响应这些光脉冲的通过。 除了有助于我们理解由非常短的激光脉冲照射的半导体响应的极限之外，该项目的结果将有助于确定半导体中的快速过程，这些过程可能用于下一代基于光纤的通信系统的100- speed光开关。 其他预期的应用将是在目前没有或很少有方便的源存在的频谱区域中创建新的电磁辐射源。 ***

9705403 Citrin This new project is a collaboration between D. Citrin at Washington State and T. Norris at the University of Michigan. It addresses the response of low-dimensional semiconductor structures to sub-picosecond shaped optical pulses. In particular, we will employ tailored optical pulses incident on semiconductor optical microcavities to coherently excite a population of excitons, and then de-excite them on the subpicosecond time scale. We will focus on the ultrafast modulation of the optical nonlinearities of the system due to the control of the exciton population at 100 GHz repetition rates. In addition, in this project we will explore the use of shaped optical pulses in semiconductors to generate tunable terahertz electromagnetic waveforms in quantum wells in the presence and absence of additional externally applied strong electromagnetic fields. Control of the THz waveforms ill be attained using ideas from coherent control and dynamics of optically excited electron-hole wavepackets. %%% This is a new collaboration between D. Citrin, a theorist at Washington State and an experimentalist, T. Norris at the University of Michigan. Laser pulses of extremely short duration will be used to control the behavior of electrons in microscopic semiconductor-based structures. This new project will address, from a fundamental viewpoint, how such short pulses propagate through small semiconductors, and how the electrons respond to the passage of these light pulses. In addition to the contribution to our understanding of the ultimate limits to the response of semiconductors illuminated by very short laser pulses, the results of this project will be useful to identify fast processes in semiconductors that may be employed for the next generation of ultrahigh- speed optical switches for optical-fiber-based communications systems. Other expec ted applications will be in creating new sources of electromagnetic radiation in regions of the spectrum where no or few convenient sources presently exist. ***